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DH71010-60

Description
Variable Capacitance Diode, High Frequency to S Band, 1pF C(T), 30V, Silicon, Abrupt, PLASTIC PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size641KB,56 Pages
ManufacturerTemex Ceramics
Download Datasheet Parametric View All

DH71010-60 Overview

Variable Capacitance Diode, High Frequency to S Band, 1pF C(T), 30V, Silicon, Abrupt, PLASTIC PACKAGE-2

DH71010-60 Parametric

Parameter NameAttribute value
package instructionR-PDSO-G2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW NOISE
Minimum breakdown voltage30 V
ConfigurationSINGLE
Diode Capacitance Tolerance20%
Nominal diode capacitance1 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandHIGH FREQUENCY TO S BAND
JESD-30 codeR-PDSO-G2
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Varactor Diode ClassificationABRUPT
Base Number Matches1
MICROWAVE SILICON COMPONENTS
Contents
MICROWAVE SILICON COMPONENTS
CONTENTS
CONTENTS
New
of y
irit log
Sp
no
ech
T
PAGE
INTRODUCTION / SYMBOLS
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12-2
SILICON PIN DIODES
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12-4
All specifications contained in that catalog are subject to change without notice.
SCHOTTKY DIODES
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12-28
TUNING VARACTORS DIODES
...............................................
12-31
POWER GENERATION DIODES
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12-40
CASE STYLES
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12-47
MOS CAPACITORS: Please consult page 7-39 of this catalog
SALES OFFICES: VISIT OUR WEB SITE AT
http://www.temex.net
12-1
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