SMD Type
Silicon Schottky Diode
BAS40-07W
Diodes
SOT-343
Unit: mm
Features
General-purpose diode for high-speed switching
Circuit protection
Voltage clamping
High-level detecting and mixing
A bsolute M axim um R atings T a = 25
P aram eter
D iode reverse voltage
F orward current
S urge forward current, t
10 m s
81
S ym bol
V
R
I
F
I
F R M
P
tot
T
j
T
op
T
stg
R
thJA
R
thJS
V alue
40
120
200
250
150
-55 to +150
-55 to +150
345
275
K /W
K /W
U nit
V
mA
mA
A
T otal power dissipation, T
S
Junction tem perature
O perating tem perature range
S torage tem perature
Junction - am bient
1)
Junction - soldering point
N ote
1.P ackage m ounted on epoxy pcb 40m m
40m m
1.5m m / 6cm
2
C u
Electrical Characteristics Ta = 25
Param eter
Breakdown voltage
Reverse current
Sym bol
V
(BR)
I
R
Test Condition
I
(BR)
= 10
V
R
= 30 V
V
R
= 40 V
I
F
= 1 m A
Forward voltage
V
F
I
F
= 10 m A
I
F
= 40 m A
Diode capacitance
Charge carrier life tim e
Differential forward resistance
C
T
ô
R
F
f = 1 MHz; V
R
= 0
I
F
= 25 m A
I
F
= 10 m A, f = 10 KHz
10
250
350
600
310
450
720
4
A
Min
40
1
10
380
500
1000
5
100
pF
ps
mV
Typ
Max
Unit
mV
A
Marking
Marking
47s
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