SMD Type
Silicon Schottky Diode
BAT62-08S;BAT62-09S
Diodes
SO
T
-363
+0.1
1.3
-0.1
0.65
Unit: mm
Features
Low barrier diode for detectors up to GHz frequencies
+0.15
2.3
-0.15
0.525
0.36
Absolute Maxim um Ratings Ta = 25
Param eter
Diode reverse voltage
Forward current
Total power dissipation; T
S
Junction tem perature
Storage tem perature range
Junction - soldering point
BAT62-08S
BAT62-09S
Note
1.For calculation of R
thJA
please refer to Application Note Therm al Resistance
1)
Sym bol
V
RM
V
R
105
I
FM
T
j
T
stg
Rating
40
20
100
150
-55 to +150
Unit
V
V
mA
R
thJS
450
tbd
K/W
Electrical Characteristics T a = 25
Param eter
Reverse current
Forward voltage
Forward voltage m atching
2)
Note
2.ÄVF is the difference between lowest and highest VF in a m ultiple diode com ponent.
Sym bol
I
R
V
F
ÄV
F
Conditions
V
R
= 40 V
I
F
= 2 m A
I
F
= 2 m A
0.58
Min
Typ
M ax
10
1
20
Unit
A
V
mV
Marking
Type
Marking
BAT62-08S
62s
BAT62-09S
69s
+0.05
0.95
-0.05
0.1max
+0.1
0.3
-0.1
+0.1
2.1
-0.1
+0.05
0.1
-0.02
+0.1
1.25
-0.1
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