SMD Type
Silicon Schottky Diode
BAT68-04W,BAT68-05W,BAT68-06W
Diodes
Features
For mixer applications in VHF/UHF range
For high-speed switching application
Absolute M axim um Ratings Ta = 25
Param eter
Diode reverse voltage
Forward current
Total power dissipation
Junction tem perature
Storage tem perature
Junction - soldering point(Note 1)
Note
1.For calculation of R
thJA
please refer to Application Note Therm al Resistance
T
S
92
Sym bol
V
R
I
F
P
tot
T
j
T
stg
R
thJS
Value
8
130
150
150
-55 to +150
390
K/W
Unit
V
mA
mW
Electrical Characteristics Ta = 25
Param eter
Breakdown voltage
Reverse current
Sym bol
V
(BR)
I
R
Conditions
I
(BR)
= 10
V
R
= 1 V
V
R
= 1 V, T
A
= 60
Forward voltage
Diode capacitance
Differential forward resistance
V
F
C
T
R
F
I
F
= 1 m A
I
F
= 10 m A
V
R
= 0 , f = 1 MHz
I
F
= 5 m A, f = 10 KHz
340
318
390
A
Min
8
0.1
1.2
340
500
1
10
pF
Typ
Max
Unit
V
A
mV
Marking
Type
Marking
BAT68-04W
84s
BAT68-05W
85s
BAT68-06W
86s
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