SMD Type
Schottky barrier (double) diodes
BAT754 series
Diodes
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
+0.1
2.4
-0.1
Ultra high switching speed
Guard ring protected
Small plastic SMD package
Low diode capacitance.
1
2
+0.1
1.3
-0.1
Features
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Continuous reverse voltage
Continuous forward current
Repetitive peak forward current
Non-repetitive peak forward current
Storage temperature
Junction temperature
Operating ambient temperature
Symbol
V
R
I
F
I
FRM
I
FSM
T
stg
T
j
T
amb
-65
tp < 1 s;ä < 0.5
tp = 8.3 ms half sinewave;JEDEC method
-65
Conditions
Min
Max
30
200
300
600
+150
125
+125
Unit
V
mA
mA
mA
E le c tric a l C h a ra c te ris tic s T a = 2 5
P a ra m e te r
S ym b o l
C o n d itio n s
I
F
= 0 .1 m A
I
F
= 1 m A
F o rw a rd vo lta g e
V
F
I
F
= 1 0 m A
I
F
= 3 0 m A
I
F
= 1 0 0 m A
R e ve rs e c u rre n t
D io d e c a p a c ita n c e
N o te
1 . P u ls e te s t: t
p
< 3 0 0
s; ä
0 .0 2 .
I
R
C
d
V
R
= 2 5 V ; N o te 1
f = 1 M H z; V
R
= 1 V
600
2
10
M in
M ax
200
260
340
420
U n it
mV
mV
mV
mV
mV
A
pF
Marking
Type
Marking
BAT754
2K
BAT754A
2L
BAT754C
2M
BAT754S
2N
0-0.1
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