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BAT754S

Description
0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB
Categorysemiconductor    Discrete semiconductor   
File Size33KB,1 Pages
ManufacturerKEXIN
Websitehttp://www.kexin.com.cn/html/index.htm
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BAT754S Overview

0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB

BAT754S Parametric

Parameter NameAttribute value
Number of terminals3
Number of components2
Processing package descriptionPLASTIC PACKAGE-3
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingTIN
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
CraftsmanshipSCHOTTKY
structureCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeSIGNAL DIODE
Maximum repetitive peak reverse voltage30 V
Maximum average forward current0.2000 A
SMD Type
Schottky barrier (double) diodes
BAT754 series
Diodes
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
+0.1
2.4
-0.1
Ultra high switching speed
Guard ring protected
Small plastic SMD package
Low diode capacitance.
1
2
+0.1
1.3
-0.1
Features
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Continuous reverse voltage
Continuous forward current
Repetitive peak forward current
Non-repetitive peak forward current
Storage temperature
Junction temperature
Operating ambient temperature
Symbol
V
R
I
F
I
FRM
I
FSM
T
stg
T
j
T
amb
-65
tp < 1 s;ä < 0.5
tp = 8.3 ms half sinewave;JEDEC method
-65
Conditions
Min
Max
30
200
300
600
+150
125
+125
Unit
V
mA
mA
mA
E le c tric a l C h a ra c te ris tic s T a = 2 5
P a ra m e te r
S ym b o l
C o n d itio n s
I
F
= 0 .1 m A
I
F
= 1 m A
F o rw a rd vo lta g e
V
F
I
F
= 1 0 m A
I
F
= 3 0 m A
I
F
= 1 0 0 m A
R e ve rs e c u rre n t
D io d e c a p a c ita n c e
N o te
1 . P u ls e te s t: t
p
< 3 0 0
s; ä
0 .0 2 .
I
R
C
d
V
R
= 2 5 V ; N o te 1
f = 1 M H z; V
R
= 1 V
600
2
10
M in
M ax
200
260
340
420
U n it
mV
mV
mV
mV
mV
A
pF
Marking
Type
Marking
BAT754
2K
BAT754A
2L
BAT754C
2M
BAT754S
2N
0-0.1
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BAT754S Related Products

BAT754S BAT754 BAT754A BAT754C
Description 0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB 0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB 0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB 0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB
Number of terminals 3 3 3 3
Number of components 2 2 2 2
Processing package description PLASTIC PACKAGE-3 PLASTIC PACKAGE-3 PLASTIC PACKAGE-3 PLASTIC PACKAGE-3
Lead-free Yes Yes Yes Yes
EU RoHS regulations Yes Yes Yes Yes
China RoHS regulations Yes Yes Yes Yes
state ACTIVE ACTIVE ACTIVE ACTIVE
packaging shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package Size SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes Yes Yes
Terminal form GULL WING GULL WING GULL WING GULL WING
terminal coating TIN TIN TIN TIN
Terminal location DUAL DUAL DUAL DUAL
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Craftsmanship SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
structure COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON
Diode type SIGNAL DIODE SIGNAL DIODE SIGNAL DIODE SIGNAL DIODE
Maximum repetitive peak reverse voltage 30 V 30 V 30 V 30 V
Maximum average forward current 0.2000 A 0.2000 A 0.2000 A 0.2000 A

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