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HVD380B

Description
3 pF, SILICON, VARIABLE CAPACITANCE DIODE
Categorysemiconductor    Discrete semiconductor   
File Size29KB,1 Pages
ManufacturerKEXIN
Websitehttp://www.kexin.com.cn/html/index.htm
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HVD380B Overview

3 pF, SILICON, VARIABLE CAPACITANCE DIODE

SMD Type
Variable Capacitance Diode for VCO
HVD380B
Diodes
SOD-123
+0.1
2.7
-0.1
+0.1
0.55
-0.1
Unit: mm
+0.05
1.1
-0.05
Features
High capacitance ratio. (n = 1.70 min)
Low series resistance. (rs = 0.80
max)
0.50
+0.1
3.7
-0.1
0.1max
Super small Flat Package (SFP) is suitable for surface mount design.
0.35
A b s o lu te M a x im u m R a tin g s T a = 2 5
P a ra m e te r
R e ve rs e V o lta g e
J u n c tio n te m p e ra tu re
S to ra g e te m p e ra tu re
S ym b o l
V
R
T
j
T
stg
V a lu e
15
125
-5 5 to + 1 2 5
U n it
V
Electrical Characteristics Ta = 25
Parameter
Reverse current
Symbol
I
R1
I
R2
C
1
Capacitance
C
3
C
4
n
1
Capacitance ratio
Series resistance
n
2
r
s
Conditions
V
R
= 15 V
V
R
= 15 V,Ta = 60
V
R
= 1 V, f = 1 MHz
V
R
= 3 V, f = 1 MHz
V
R
= 4 V, f = 1 MHz
C
1
/ C
3
C
1
/ C
4
V
R
= 1 V, f = 470 MHz
0.88
1.66
1.7
2.08
Min
Typ
Max
10
100
3.12
1.795
1.471
1.84
2.25
0.8
pF
Unit
nA
Marking
Marking
J
+0.05
0.1
-0.02
+0.1
1.6
-0.1
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