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BAS20WT-TP

Description
Rectifier Diode, 1 Element, 0.2A, 150V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    diode   
File Size177KB,2 Pages
ManufacturerMicro Commercial Components (MCC)
Environmental Compliance  
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BAS20WT-TP Overview

Rectifier Diode, 1 Element, 0.2A, 150V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3

BAS20WT-TP Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionR-PDSO-G3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.2 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage150 V
Maximum reverse recovery time0.05 µs
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
Base Number Matches1
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla Street Chatsworth

  !"#
$ %    !"#
BAS19WT
BAS20WT
BAS21WT
Features
Power dissipation: 200mW (T
amb
=25 )
Collector current: 200mA
Halogen
free available upon request by adding suffix "-HF"
200mW Switching
Diode
KA8
KT2
KT3
A
D
Marking:
BAS19W
BAS20W
BAS21W
SOT-323
Maximum Ratings
Operating Temperature: -55 to +150
Storage Temperature: -55 to +150
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Lead Free Finish/Rohs Compliant ("P"Suffix designates
RoHS Compliant. See ordering information)
G
B
F
E
C
Electrical Characteristics @ 25°C Unless Otherwise Specified
Reverse Voltage
BAS19WT
BAS20WT
BAS21WT
Peak Forward Current
Maximum
Instantaneous Forward
Voltage
Maximum DC Reverse
Current At Rated DC
Blocking Voltage
Diode Capacitance
Reverse Recovery
Time
V
R
I
F
V
F
100V
150V
200V
200mA
1.0V
1.25V
0.1µA
5pF
50ns
I
R
=100­A
H
J
K
DIMENSIONS
INCHES
MIN
MAX
.071
.087
.045
.053
.083
.096
.026 Nominal
.047
.055
.012
.016
.000
.004
.035
.039
.004
.010
.006
.016
MM
MIN
MAX
1.80
2.20
1.15
1.35
2.10
2.45
0.65Nominal
1.20
1.40
.30
.40
.000
.100
.90
1.00
.100
.250
.15
.40
I
R
C
D
T
rr
I
FM
=100mA;
I
FM
=200mA;
V
R
=100Volts(BAS19WT)
V
R
=150Volts(BAS20WT)
V
R
=200Volts(BAS21WT)
Measured at 1.0MHz,
V
R
=0V
I
F
=I
R
=30mA
Irr=0.1I
R
DIM
A
B
C
D
E
F
G
H
J
K
NOTE
Suggested Solder
Pad Layout
0.70
0.90
1.90
0.65
0.65
Revision:
D
www.mccsemi .com
1 of 2
2013/09/24

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