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BAS20WRVG

Description
Rectifier Diode, 1 Element, 0.2A, 150V V(RRM), Silicon, GREEN PACKAGE-3
CategoryDiscrete semiconductor    diode   
File Size129KB,5 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

BAS20WRVG Overview

Rectifier Diode, 1 Element, 0.2A, 150V V(RRM), Silicon, GREEN PACKAGE-3

BAS20WRVG Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionR-PDSO-G3
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-G3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.2 W
Maximum repetitive peak reverse voltage150 V
Maximum reverse recovery time0.05 µs
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Base Number Matches1
BAS19W/20W/21W
Taiwan Semiconductor
Small Signal Product
SOT-323 100-250V/200mA Switching Diode
FEATURES
- Fast Switching Speed
- Surface Mounted Device
- Moisture sensitivity level 1
- Pb free and RoHS compliant
MECHANICAL DATA
- Case: SOT-323 package
- High temperature soldering guaranteed: 260°C/10s
- Weight: 5mg (approximately)
SOT-323
APPLICATION
- General purpose switching application
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
VALUE
PARAMETER
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Average Rectified Output Currect
Power Dissipation
Thermal Resistance form Junction to Ambient
Junction Temperature
Storage Temperature Range
PARAMETER
BAS19W
Reverse Breakdown Voltage
BAS20W
BAS21W
BAS19W
Reverse Voltage Leakage Current BAS20W
BAS21W
Forward Voltage
Diode Capacitance
Reverse Recovery Time
at V
R
= 100 V
at V
R
= 150 V
at V
R
= 200 V
at I
F
= 30 mA
at I
F
= 100 mA
V
R
=0V, f=1.0MHz
at I
F
= I
R
=30mA , I
rr
=0.1xI
R
V
F
C
D
t
rr
--
--
I
R
at I
R
= 100
µA
V
(BR)
TEST CONDITION
SYMBOL
BAS19W
V
RRM
V
R
I
O
P
D
R
θJA
T
J
T
STG
SYMBOL
MIN
100
150
250
--
--
--
1
1.25
5
50
V
pF
ns
0.1
µA
V
100
100
BAS20W
150
150
200
200
625
125
- 55 to + 150
MAX
o
UNIT
BAS21W
250
250
V
V
mA
mW
C/W
o
o
C
C
UNIT
Document Number: DS_S1405006
Version: B14

BAS20WRVG Related Products

BAS20WRVG BAS19W RVG BAS20W RVG BAS21W RVG
Description Rectifier Diode, 1 Element, 0.2A, 150V V(RRM), Silicon, GREEN PACKAGE-3 DIODE GEN PURP 100V 200MA SOT323 DIODE GEN PURP 150V 200MA SOT323 DIODE GEN PURP 250V 200MA SOT323
Diode type RECTIFIER DIODE standard standard standard
Voltage - DC Reverse (Vr) (Maximum) - 100V 150V 250V
Current - average rectification (Io) - 200mA 200mA 200mA
Voltage at different If - Forward (Vf - 1.25V @ 100mA 1.25V @ 100mA 1.25V @ 100mA
speed - Small signal =< 200mA (Io), any speed Small signal =< 200mA (Io), any speed Small signal =< 200mA (Io), any speed
Reverse recovery time (trr) - 50ns 50ns 50ns
Current at different Vr - Reverse leakage current - 100nA @ 100V 100nA @ 150V 100nA @ 250V
Capacitance at different Vr, F - 5pF @ 0V,1MHz 5pF @ 0V,1MHz 5pF @ 0V,1MHz
Installation type - surface mount surface mount surface mount
Package/casing - SC-70,SOT-323 SC-70,SOT-323 SC-70,SOT-323
Supplier device packaging - SOT-323 SOT-323 SOT-323
Operating Temperature - Junction - -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

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