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BAS20WRFG

Description
Rectifier Diode, 1 Element, 0.2A, 150V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size137KB,5 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

BAS20WRFG Overview

Rectifier Diode, 1 Element, 0.2A, 150V V(RRM), Silicon,

BAS20WRFG Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-G3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.2 W
Maximum repetitive peak reverse voltage150 V
Maximum reverse recovery time0.05 µs
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Base Number Matches1
BAS19W/20W/21W
Taiwan Semiconductor
Small Signal Product
SOT-323 100-250V/200mA Switching Diode
FEATURES
- Surface Mounted Device
- Moisture sensitivity level 1
- Pb free and RoHS compliant
- Fast Switching Speed
- General purpose switching application
SOT-323
MECHANICAL DATA
- Case: SOT-323 package
- High temperature soldering guaranteed: 260°C/10s
- Weight: 5mg±20%
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
VALUE
PARAMETER
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Average Rectified Output Currect
Power Dissipation
Thermal Resistance form Junction to Ambient
Junction Temperature
Storage Temperature Range
PARAMETER
BAS19W
Reverse Breakdown Voltage
BAS20W
BAS21W
BAS19W
Reverse Voltage Leakage Current BAS20W
BAS21W
Forward Voltage
Diode Capacitance
Reverse Recovery Time
at V
R
= 100 V
at V
R
= 150 V
at V
R
= 200 V
at I
F
= 30 mA
at I
F
= 100 mA
V
R
=0V, f=1.0MHz
at I
F
= I
R
=30mA , I
rr
=0.1xI
R
V
F
C
D
t
rr
--
--
I
R
at I
R
= 100
µA
V
(BR)
TEST CONDITION
SYMBOL
BAS19W
V
RRM
V
R
I
O
P
D
R
thjA
T
J
T
STG
SYMBOL
MIN
100
150
250
--
--
--
1
1.25
5
50
V
pF
ns
0.1
µA
V
100
100
BAS20W
150
150
200
200
625
125
- 55 to + 150
MAX
o
UNIT
BAS21W
250
250
V
V
mA
mW
C/W
o
o
C
C
UNIT
Document Number: DS_S1405006
Version: B14
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