SMD Type
Transistors
IC
PNP Epitaxial Planar Silicon Transistors
2SB1527
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
Features
+0.1
2.4
-0.1
Low saturation voltage.
Contains a diode between collector and emitter.
Contains a bias resistor between base and emitter.
Large current capacity.
Compact package making it easy to realize highdensity,
+0.1
1.3
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
small-sized hybrid ICs.
0-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Jumction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
-20
-15
-5
-0.8
-2
200
150
-55 to +150
Unit
V
V
V
A
A
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
DC current Gain
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Diode forward voltage
Base-emitter resistance
Symbol
I
CBO
h
FE
f
T
C
ob
Testconditons
V
CB
= -15V , I
E
= 0
V
CE
= -2V , I
C
= -0.5A
V
CE
= -2V , I
C
= -0.5A
V
CB
= -10V , f = 1MHz
70
250
30
-0.2
-.095
-20
-15
-1.5
1
-0.4
-1.3
MHz
pF
V
V
V
V
V
KÙ
Min
Typ
Max
-1
Unit
ìA
V
CE(sat)
I
C
= -500mA , I
B
= -10mA
V
BE(sat)
I
C
= -500mA , I
B
= -10mA
V
(BR)CBO
I
C
= -10ìA , I
E
= 0
V
(BR)CEO
I
C
= -1mA , R
BE
=
V
F
R
BE
I
F
=-0.5A
Marking
Marking
NS
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