A4T datasheet, PDF - EEWORLD Datasheet

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A4T: Description0.2 A, 85 V, 4 ELEMENT, SILICON, SIGNAL DIODE; Categorysemiconductor Discrete semiconductor; File Size38KB，2 Pages; ManufacturerKEXIN; Websitehttp://www.kexin.com.cn/html/index.htm

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A4T Overview

0.2 A, 85 V, 4 ELEMENT, SILICON, SIGNAL DIODE

A4T Parametric

Parameter Name	Attribute value
Number of terminals	6
Number of components	4
Processing package description	ROHS COMPLIANT PACKAGE-6
Lead-free	Yes
EU RoHS regulations	Yes
China RoHS regulations	Yes
state	ACTIVE
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
terminal coating	MATTE Tin
Terminal location	pair
Packaging Materials	Plastic/Epoxy
structure	2 BANKS, COMMON CATHODE, 2 ELEMENTS
Diode component materials	silicon
Maximum power consumption limit	0.2500 W
Diode type	Signal diode
Maximum reverse recovery time	0.0040 us
Maximum repetitive peak reverse voltage	85 V
Maximum average forward current	0.2000 A

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SMD Type

High-Speed Double Diode Array

BAV70S

Diodes

SO

T

-363

+0.1

1.3

-0.1

0.65

Unit: mm

High switching speed: max. 4 ns

Continuous reverse voltage:max. 75 V

Repetitive peak reverse voltage:max. 85 V

Repetitive peak forward current:max. 450 mA.

+0.1

0.3

-0.1

+0.1

2.1

-0.1

0.36

+0.05

0.1

-0.02

Absolute Maximum Ratings Ta = 25

Parameter

Per diode

repetitive peak forward current

continuous reverse voltage

continuous forward current

repetitive peak forward current

V

RRM

V

R

I

F

I

FRM

square wave; T

j

= 25

non-repetitive peak forward current

I

FSM

t=1

s

prior to surge;

4

1

0.5

350

-65

+150

255

K/W

mW

A

single diode loaded;

all diodes loaded;

85

75

250

100

450

V

mA

Symbol

Conditions

Min

Max

Unit

t = 1 ms

t=1s

total power dissipation

storage temperature

junction temperature

thermal resistance from junction to ambient

Note

1. One or more diodes loaded.

P

tot

T

stg

T

j

R

th j-a

Ts = 60 ; note 1

+0.05

0.95

-0.05

0.1max

+0.1

1.25

-0.1

+0.15

2.3

-0.15

Small plastic SMD package

0.525

Features

www.kexin.com.cn

1

A4T Related Products

	A4T	BAV70S
Description	0.2 A, 85 V, 4 ELEMENT, SILICON, SIGNAL DIODE	0.2 A, 85 V, 4 ELEMENT, SILICON, SIGNAL DIODE
Number of terminals	6	6
Number of components	4	4
Processing package description	ROHS COMPLIANT PACKAGE-6	ROHS COMPLIANT PACKAGE-6
Lead-free	Yes	Yes
EU RoHS regulations	Yes	Yes
China RoHS regulations	Yes	Yes
state	ACTIVE	ACTIVE
packaging shape	Rectangle	Rectangle
Package Size	SMALL OUTLINE	SMALL OUTLINE
surface mount	Yes	Yes
Terminal form	GULL WING	GULL WING
terminal coating	MATTE Tin	MATTE Tin
Terminal location	pair	pair
Packaging Materials	Plastic/Epoxy	Plastic/Epoxy
structure	2 BANKS, COMMON CATHODE, 2 ELEMENTS	2 BANKS, COMMON CATHODE, 2 ELEMENTS
Diode component materials	silicon	silicon
Maximum power consumption limit	0.2500 W	0.2500 W
Diode type	Signal diode	Signal diode
Maximum reverse recovery time	0.0040 us	0.0040 us
Maximum repetitive peak reverse voltage	85 V	85 V
Maximum average forward current	0.2000 A	0.2000 A

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