BC849 datasheet, PDF - EEWORLD Datasheet

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BC849: Description100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR; Categorysemiconductor Discrete semiconductor; File Size37KB，2 Pages; ManufacturerKEXIN; Websitehttp://www.kexin.com.cn/html/index.htm

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BC849 Overview

100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR

BC849 Parametric

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	NPN
Maximum collector current	0.1000 A
Maximum Collector-Emitter Voltage	30 V
state	DISCONTINUED
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
Terminal location	pair
Packaging Materials	Plastic/Epoxy
structure	single
Number of components	1
Transistor component materials	silicon
Maximum ambient power consumption	0.3300 W
Transistor type	Universal small signal
Minimum DC amplification factor	420
Rated crossover frequency	300 MHz

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SMD Type

NPN General Purpose Transistors

BC849, BC850

SOT-23

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Transistors

Unit: mm

Features

+0.1

2.4

-0.1

+0.1

0.95

-0.1

+0.1

1.9

-0.1

0.55

Low voltage (max. 45 V).

+0.1

1.3

-0.1

Low current (max. 100 mA)

0.4

+0.05

0.1

-0.01

0.97

+0.1

0.38

-0.1

+0.1

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

collector-base voltage

Symbol

CBO

Rating

collector-emitter voltage

emitter-base voltage

collector current (DC)

peak collector current

peak base current

total power dissipation T

amb

storage temperature

junction temperature

operating ambient temperature

thermal resistance from junction to ambient *

* Transistor mounted on an FR4 printed-circuit board.

CEO

EBO

tot

stg

amb

th(j-a)

100

200

250

-65 to 150

150

-65 to 150

500

K/W

Unit

0-0.1

www.kexin.com.cn

BC849 Related Products

	BC849	BC849C	BC849B	BC850	BC850C	BC850B
Description	100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR	100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR	100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR	100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR	100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR	100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Number of terminals	3	3	3	3	3	3
Transistor polarity	NPN	NPN	NPN	NPN	NPN	NPN
Maximum collector current	0.1000 A	0.1000 A	0.1000 A	0.1000 A	0.1000 A	0.1000 A
Maximum Collector-Emitter Voltage	30 V	30 V	30 V	30 V	45 V	30 V
state	DISCONTINUED	DISCONTINUED	DISCONTINUED	DISCONTINUED	ACTIVE	DISCONTINUED
packaging shape	Rectangle	Rectangle	Rectangle	Rectangle	RECTANGULAR	Rectangle
Package Size	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
surface mount	Yes	Yes	Yes	Yes	Yes	Yes
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	pair	pair	pair	pair	DUAL	pair
Packaging Materials	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	PLASTIC/EPOXY	Plastic/Epoxy
structure	single	single	single	single	SINGLE	single
Number of components	1	1	1	1	1	1
Transistor component materials	silicon	silicon	silicon	silicon	SILICON	silicon
Transistor type	Universal small signal	Universal small signal	Universal small signal	Universal small signal	GENERAL PURPOSE SMALL SIGNAL	Universal small signal
Minimum DC amplification factor	420	420	420	420	420	420
Rated crossover frequency	300 MHz	300 MHz	300 MHz	300 MHz	250 MHz	300 MHz
Maximum ambient power consumption	0.3300 W	0.3300 W	0.3300 W	0.3300 W	-	0.3300 W

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