SMD Type
PNP Medium Power Transistors
BCP51,BCP52,BCP53
SOT-223
+0.2
6.50
-0.2
Transistors
Unit: mm
+0.2
3.50
-0.2
High collector current
1.3 W power dissipation.
+0.1
3.00
-0.1
+0.2
0.90
-0.2
+0.3
7.00
-0.3
4
1 base
1
2
2.9
4.6
3
+0.1
0.70
-0.1
2 collector
3 emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage (open emitter)
BCP51
BCP52
BCP53
Collector-emitter voltage(open base)
BCP51
BCP52
BCP53
Emitter-base voltage( open collector)
Collector current
Peak collector current
Peak base current
Total power dissipation T
amb
Storage temperature
Junction temperature
Operating ambient temperature
Thermal resistance from junction to ambient
Thermal resistance from junction to solder point
25
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
R
amb
R
th(j-a)
R
th(j-s)
V
CEO
V
CBO
Symbol
Rating
-45
-60
-100
-45
-60
-80
-5
-1
-1.5
-0.2
1.3
-65 to +150
150
-65 to +150
95
14
K/W
K/W
Unit
V
V
V
V
V
V
V
A
A
A
W
+0.15
1.65
-0.15
Features
0
.1max
+0.05
0.90
-0.05
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1
SMD Type
BCP51,BCP52,BCP53
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
Symbol
I
CBO
I
EBO
Testconditons
V
CB
= -30 V, I
E
= 0
V
CB
= -30 V, I
E
= 0; Tj = 125
V
EB
= -5 V, I
C
= 0
I
C
= -5 mA; V
CE
= -2 V
DC current gain
h
FE
I
C
= -150 mA; V
CE
= -2 V
I
C
= -500 mA; V
CE
= -2 V
DC current gain BCP51-10,BCP52-10,BCP53-10
BCP51-16,BCP52-16,BCP53-16
Collector-emitter saturation voltage
Base to emitter voltage
Transition frequency
h
FE
I
C
= -150 mA; V
CE
= -2 V
I
C
= -150 mA; V
CE
= -2 V
V
CE(sat)
I
C
= -500 mA; I
B
= -50 mA
V
BE
f
T
I
C
= -500 mA; V
CE
= -2 V
I
C
= -10 mA; V
CE
= -5 V; f = 100 MHz
Transistors
Min
Typ
Max
-100
-10
-100
Unit
nA
ìA
nA
63
63
40
63
100
160
250
-0.5
-1
115
V
V
MHz
250
2
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