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BCW89

Description
100 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size35KB,2 Pages
ManufacturerKEXIN
Websitehttp://www.kexin.com.cn/html/index.htm
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BCW89 Overview

100 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR

BCW89 Parametric

Parameter NameAttribute value
Maximum collector current0.1000 A
Maximum Collector-Emitter Voltage60 V
Number of terminals3
Processing package descriptionPLASTIC, SOT-23, 3 PIN
each_compliYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateActive
structureSINGLE
Minimum DC amplification factor120
jesd_30_codeR-PDSO-G3
jesd_609_codee3
moisture_sensitivity_level1
Number of components1
Maximum operating temperature150 Cel
Packaging MaterialsPLASTIC/EPOXY
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
eak_reflow_temperature__cel_260
larity_channel_typePNP
wer_dissipation_max__abs_0.3500 W
qualification_statusCOMMERCIAL
sub_categoryOther Transistors
surface mountYES
terminal coatingTIN
Terminal formGULL WING
Terminal locationDUAL
ime_peak_reflow_temperature_max__s_30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Rated crossover frequency150 MHz
vcesat_max0.3000 V
SMD Type
PNP General Purpose Transistors
BCW89
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
IC
Unit: mm
Features
+0.1
2.4
-0.1
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
Low voltage (max. 60 V).
+0.1
1.3
-0.1
Low current (max. 100 mA).
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Peak base current
Total power dissipation
Storage temperature
Junction temperature
Operating ambient temperature
Thermal resistance from junction to ambient *
* Transistor mounted on an FR4 printed-circuit board.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
R
amb
R
th j-a
Rating
-80
-60
-5
-100
-200
-200
250
-65 to +150
150
-65 to +150
500
K/W
Unit
V
V
V
mA
mA
mA
mW
0-0.1
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