FMMT449 datasheet, PDF - EEWORLD Datasheet

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FMMT449: Description1000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR; Categorysemiconductor Discrete semiconductor; File Size32KB，1 Pages; ManufacturerKEXIN; Websitehttp://www.kexin.com.cn/html/index.htm

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FMMT449 Overview

1000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR

FMMT449 Parametric

Parameter Name	Attribute value
Maximum collector current	1 A
Maximum Collector-Emitter Voltage	30 V
Number of terminals	3
Processing package description	SOT-23, 3 PIN
state	Active
structure	SINGLE
Minimum DC amplification factor	40
jesd_30_code	R-PDSO-G3
Number of components	1
Maximum operating temperature	150 Cel
Packaging Materials	PLASTIC/EPOXY
packaging shape	RECTANGULAR
Package Size	SMALL OUTLINE
larity_channel_type	NPN
wer_dissipation_max__abs_	0.4250 W
qualification_status	COMMERCIAL
sub_category	Other Transistors
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Transistor component materials	SILICON
Rated crossover frequency	150 MHz

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SMD Type

Medium Power Transistor

FMMT449

SOT-23

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Transistors

IC

Unit: mm

+0.1

2.4

-0.1

1

+0.1

0.95

-0.1

+0.1

1.9

-0.1

2

0.55

Low equivalent on-resistance.

+0.1

1.3

-0.1

Features

0.4

3

+0.05

0.1

-0.01

0.97

+0.1

0.38

-0.1

+0.1

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Peak collector current

Collector current

Base current

Power dissipation

Operating and storage temperature range

Symbol

V

CBO

V

CEO

V

EBO

I

CM

I

C

I

B

P

tot

T

j,

T

stg

Rating

50

30

5

2

1

200

500

-55 to +125

Unit

V

A

mA

mW

Electrical Characteristics Ta = 25

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cut-off current

Collector-emitter saturation voltage *

Base-emitter saturation voltage *

Base-emitter voltage *

Symbol

V

(BR)CBO

I

C

=1mA,I

E

=0

V

(BR)CEO

I

C

=10mA,I

B

=0

V

(BR)EBO

I

E

=100ìA,I

C

=0

I

CBO

I

EBO

V

CE(

sat)

V

CB

=40V,I

E

=0

V

CB

=40V,Tam

B

=100

V

EB

=4V,I

C

=0

I

C

=1A,I

B

=100mA

I

C

=2A,I

B

=200mA

Testconditons

Min

50

30

5

0.1

10

0.1

0.5

1.0

1.25

1.0

70

100

80

40

150

15

MHz

pF

300

Typ

Max

Unit

V

ìA

V

BE(

sat) I

C

=1A,I

B

=100mA

V

BE(ON)

I

C

=1A,V

CE

=2V

I

C

=50mA, V

CE

=2V*

Static Forward Current Transfer Ratio

h

FE

I

C

=500mA, V

CE

=2V*

I

C

=1A, V

CE

=2V*

I

C

=2A, V

CE

=2V*

Current-gain-bandwidth product

Output capacitance

* Pulse width=300ìs. Duty cycle

2%

f

T

C

obo

I

C

=50mA,V

CE

=10V,f=100MHz

V

CB

=10V,f=1MHz

Marking

449

0-0.1

www.kexin.com.cn

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