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JAP

Description
0.2 A, 50 V, 2 ELEMENT, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size37KB,2 Pages
ManufacturerKEXIN
Websitehttp://www.kexin.com.cn/html/index.htm
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JAP Overview

0.2 A, 50 V, 2 ELEMENT, SILICON, SIGNAL DIODE

JAP Parametric

Parameter NameAttribute value
Number of terminals3
Number of components2
Processing package descriptionVPS05161, 3 PIN
stateDISCONTINUED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingtin lead
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structureCOMMON CATHODE, 2 ELEMENTS
Diode component materialssilicon
Maximum power consumption limit0.2500 W
Diode typeSignal diode
Maximum reverse recovery time0.0040 us
Maximum repetitive peak reverse voltage50 V
Maximum average forward current0.2000 A
SMD Type
High-speed double diode
BAV74
Diodes
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
+0.1
2.4
-0.1
Small plastic SMD package
High switching speed: max.4 ns
Continuous reverse voltage: max. 50 V
Repetitive peak reverse voltage: max. 60 V
Repetitive peak forward current: max. 450 mA
+0.1
1.3
-0.1
Features
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Repetitive peak reverse voltage
Continuous reverse voltage
Continuous forward current
Repetitive peak forward current
Symbol
V
RRM
V
R
I
F
I
FRM
square wave;T
j
= 25
Non-repetitive peak forward current
I
FSM
t=1
s
prior to surge;
4
1
0.5
250
-65
+150
150
360
500
K/W
K/W
mW
A
single diode loaded; Note 1
double diode loaded; Note 1
Conditions
Min
Max
60
50
215
125
450
mA
Unit
V
V
mA
t = 1 ms
t=1s
Total power dissipation
Storage temperature
Junction temperature
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
Note
1. Device mounted on an FR4 printed-circuit board.
P
tot
T
stg
T
j
R
th j-tp
R
th j-a
T
amb
= 25 ; Note 1
0-0.1
www.kexin.com.cn
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JAP Related Products

JAP BAV74
Description 0.2 A, 50 V, 2 ELEMENT, SILICON, SIGNAL DIODE 0.2 A, 50 V, 2 ELEMENT, SILICON, SIGNAL DIODE
Number of terminals 3 3
Number of components 2 2
Processing package description VPS05161, 3 PIN VPS05161, 3 PIN
state DISCONTINUED DISCONTINUED
packaging shape Rectangle Rectangle
Package Size SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes
Terminal form GULL WING GULL WING
terminal coating tin lead tin lead
Terminal location pair pair
Packaging Materials Plastic/Epoxy Plastic/Epoxy
structure COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode component materials silicon silicon
Maximum power consumption limit 0.2500 W 0.2500 W
Diode type Signal diode Signal diode
Maximum reverse recovery time 0.0040 us 0.0040 us
Maximum repetitive peak reverse voltage 50 V 50 V
Maximum average forward current 0.2000 A 0.2000 A

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