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1SS350

Description
SILICON, UHF BAND, MIXER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size30KB,1 Pages
ManufacturerKEXIN
Websitehttp://www.kexin.com.cn/html/index.htm
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1SS350 Overview

SILICON, UHF BAND, MIXER DIODE

SMD Type
Sillicon Epitaxial Schottky Barrier Diode
1SS350
Diodes
SOT-23
Unit: mm
Small interterminal capacitance (C=0.69pF typ).
+0.1
2.4
-0.1
Low forward voltage (V
F
=0.23V max).
High breakdown voltage (V
R
=55V).
Very small-sized package permitting the 1SS350-applied sets to be made small and slim.
+0.1
1.3
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
Features
+0.1
2.9
-0.1
+0.1
0.4
-0.1
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
A b s o lu te M a x im u m R a tin g s T a = 2 5
P a ra m e te r
R e v e r s e V o lt a g e
F o rw a rd C u rre n t
J u n c t io n T e m p e r a t u r e
S to ra g e te m p e ra tu re
S ym bol
V
R
I
F
T
j
T
s tg
V a lu e
5
30
125
-5 5 to + 1 2 5
U n it
V
mA
Electrical Characteristics Ta = 25
Param eter
Forward Voltage
Forward Current
Reverse Current
Interterm inal Capacitance
Sym bol
V
F
I
F
I
R
C
Conditions
I
F
= 1 m A
V
F
= 0.5 V
V
R
= 0.5 V
V
R
= 0.2 V, f = 1 MHz
0.69
30
25
0.9
Min
Typ
Max
0.23
Unit
V
mA
A
pF
Marking
Marking
BH
0-0.1
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