SMD Type
Silicon PIN Diode
BA597
Diodes
SOD-323
+0.1
1.7
-0.1
Unit: mm
RF switch, RF attenuator for frequencies above 10 MHz
Very low IM distortion
0.475
+0.1
2.6
-0.1
1.0max
0.375
A bsolute M axim um R atings T a = 25
P aram eter
R everse voltage
F orw ard current
T otal pow er dissipation T
S
Junction tem perature
S torage tem perature range
N ote:
1.P ackage m ounted on alum inum 15 m m
16.7 m m
0.7 m m .
40
1)
S ym bol
V
R
I
F
T
to t
T
j
T
stg
V alue
50
100
250
150
-55 to + 150
U nit
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Reverse current
Forward voltage
Diode capacitance
Symbol
I
R
V
F
C
T
Conditions
V
R
=30 V
I
F
= 100 mA
V
R
= 10 V, f = 1 MHz
V
R
= 0 V, f = 100 MHz
Forward resistance
Charge carrier lifetime
rf
L
Min
Typ
Max
20
+0.05
0.1
-0.02
Unit
nA
V
pF
0.9
0.52
0.27
22
4.2
2.5
I
F
= 1.5 mA, f = 100 MHz
I
F
= 10 mA, f = 100 MHz
I
F
= 10 mA, I
R
= 6 mA, I
R
= 3 mA
Marking
Marking
yellow R
+0.1
1.3
-0.1
Features
+0.05
0.3
-0.05
+0.05
0.85
-0.05
S
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