SMD Type
NPN Silicon Epitaxial Transistor
2SD1899-Z
TO-252
+0.15
1.50
-0.15
Transistors
Unit: mm
2.30
+0.8
0.50
-0.7
+0.1
-0.1
6.50
+0.2
5.30
-0.2
+0.15
-0.15
Features
Low V
CE(sat)
.
+0.2
9.70
-0.2
High hFE.
+0.1
0.80
-0.1
+0.15
0.50
-0.15
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector Current (pulse) *1
Base current
Total power dissipation Ta = 25
Total power dissipation T
C
= 25
Junction temperature
Storage temperature
*1 Pulse Test PW
10ms, Duty Cycle
50%.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
T
*2
P
T
T
j
T
stg
Rating
60
60
7
3
5
0.5
2
10
150
-55 to +150
Unit
V
V
V
A
A
A
W
W
*2 Mounted on ceramic substrate of 7.5mm
2
x0.7mm
3
.8
0
www.kexin.com.cn
1
SMD Type
2SD1899-Z
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
Symbol
I
CBO
I
EBO
Testconditons
V
CB
= 60 V, I
E
= 0
V
EB
= 7 V, I
C
= 0
V
CE
= 2V, I
C
= 0.2 A
DC current gain *
h
FE
V
CE
= 2V, I
C
= 0.6 A
V
CE
= 2V, I
C
= 2.0 A
Collector saturation voltage *
Base saturation voltage *
Gain bandwidth product
Output capacitance
Turn-on time
Storage time
Fall time
* Pulsed: PW
350 ìs, duty cycle
2%
V
CE(sat)
I
C
= 1.5 A, I
B
= 0.15 A
V
BE(sat)
I
C
= 1.5 A, I
B
= 0.15 A
f
T
C
ob
ton
tstg
tf
V
CE
= 5 V, I
E
= -1.5 A
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
I
C
= 1 A,V
CC
= 10 V
I
B1
=-I
B2
=0.1A
R
L
=10Ù
Transistors
Min
Typ
Max
10
10
Unit
ìs
ìA
60
100
50
0.14
0.93
120
30
0.15
0.75
0.2
0.5
2
0.5
0.25
1.2
V
V
MHz
pF
ìs
ìs
ìs
400
h
FE
Classification
Marking
hFE
M
100 200
L
160 320
K
200 400
2
www.kexin.com.cn
京公网安备 11010802033920号
EEWORLD
