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BA595

Description
50 V, SILICON, PIN DIODE
Categorysemiconductor    Discrete semiconductor   
File Size31KB,1 Pages
ManufacturerKEXIN
Websitehttp://www.kexin.com.cn/html/index.htm
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BA595 Overview

50 V, SILICON, PIN DIODE

SMD Type
Silicon PIN Diode
BA595
Diodes
SOD-323
+0.1
1.7
-0.1
Unit: mm
Current-controlled RF resistor for switching and attenuating applications
Frequency range 1 MHz ... 2 GHz
Especially useful as antenna switch in TV-sat tuners
Very low harmonics
+0.05
0.1
-0.02
+0.1
2.6
-0.1
1.0max
0.475
0.375
A b s o lu te M a x im u m R a tin g s T a = 2 5
P a ra m e te r
D io d e re v e rs e v o lta g e
F o rw a rd c u rre n t
J u n c tio n te m p e ra tu re
O p e ra tin g te m p e ra tu re ra n g e
S to ra g e te m p e ra tu re
J u n c tio n - s o ld e rin g p o in t
1 )
N o te
1 . F o r c a lc u la tio n o f R
th J A
p le a s e re fe r to A p p lic a tio n N o te T h e rm a l R e s is ta n c e
S ym bol
V
R
I
F
T
j
T
op
T
s tg
R
th J S
V a lu e
50
50
150
-5 5 to + 1 2 5
-5 5 to + 1 5 0
370
K /W
U n it
V
mA
Electrical Characteristics Ta = 25
Parameter
Reverse current
Forward voltage
Diode capacitance
Symbol
I
R
V
F
C
T
Conditions
V
R
= 30 V
I
F
= 50 mA
V
R
= 0 V, f = 100 MHz
V
R
= 10 V, f = 1 MHz
Reverse parallel resistance
R
P
V
R
= 1 V, f = 100 MHz
V
R
= 0 V, f = 1 GHz
Forward resistance
rf
I
F
= 1.5 mA, f = 100 MHz
I
F
= 10 mA, f = 100 MHz
Charge carrier life time
I-region width
I
F
= 10 mA, I
R
= 6 mA, measured at
rr
Min
Typ
Max
20
1.1
Unit
nA
V
pF
0.26
0.22
50
10
22
4.5
1600
130
0.4
0.6
K
40
7
ns
m
I
R
= 3 mA , R
L
= 100
W
I
Marking
Marking
R
+0.1
1.3
-0.1
Features
+0.05
0.3
-0.05
+0.05
0.85
-0.05
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