SMD Type
High-speed diode
BAS678
Diodes
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
+0.1
2.4
-0.1
Small plastic SMD package
High switching speed: max. 6ns
Continuous reverse voltage: max. 80 V
Repetitive peak forward current: max. 600 mA.
+0.1
1.3
-0.1
Features
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
repetitive peak reverse voltage
Continuous reverse voltage
Continuous forward current
Repetitive peak forward current
Symbol
V
RRM
V
R
I
F
I
FRM
square wave; T
j
=25
Non-repetitive peak forward current
I
FSM
t=1
t = 100
prior to surge;
s
s
9
3
1.7
250
-65
+150
150
mW
A
Note 1
Conditions
Min
Max
100
80
250
600
Unit
V
V
mA
mA
t = 10 ms
Total power dissipation
Storage temperature
Junction temperature
Note
1. Device mounted on an FR4 printed-circuit board.
P
tot
T
stg
T
j
Tmab = 25
; Note 1
0-0.1
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1
SMD Type
High-speed diode
BAS678
Diodes
Electrical Characteristics Ta = 25
Parameter
Forward voltage
Symbol
V
F
Conditions
I
F
= 200 mA;d.c. ; Note 1
V
R
= 10 V;
Reverse current
I
R
V
R
= 75 V;
V
R
= 75 V; T
j
= 150
Diode capacitance
Reverse recovery time
Forward recovery voltage
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
Note
1. Tamb = 25
; device has reached the thermal equilibrium when mounted on an FR4 printed-circuit board.
C
d
t
rr
V
f r
R
th j-tp
R
th j-a
f = 1 MHz; V
R
= 0;
when switched from I
F
= 400 mA to I
R
= 400 mA;
R
L
= 100
;measured at I
R
= 40 mA;
2
330
500
V
K/W
K/W
Min
Max
1.0
15
100
50
2
6
Unit
V
nA
nA
A
pF
ns
when switched from I
F
= 10 mA;t
r
= 20 ns;
Marking
Marking
L52
2
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