SMD Type
Schottky Barrier (Double) Diodes
BAS70-07
Diodes
Unit: mm
Features
Low forward voltage
High breakdown voltage
Guard ring protected
Small plastic SMD package
Low diode capacitance.
Absolute Maximum Ratings Ta = 25
Parameter
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to ambient
Symbol
V
R
I
F
I
FRM
I
FSM
T
stg
T
j
T
amb
R
th j-a
-65
t
p
1 s;ä
t
p
< 10 ms
-65
0.5
Test Condition
MIN
MAX
70
70
70
100
+150
150
+150
500
K/W
Unit
V
mA
mA
A
Electrical Characteristics Ta = 25
Parameter
Symbol
Test Condition
I
F
= 1 mA
forward voltage
V
F
I
F
= 10 mA
I
F
= 15 mA
reverse current
charge carrier life time (Krakauer method)
diode capacitance
Note
1. Pulse test: t
p
= 300 ms; ä = 0.02.
I
R
ô
C
d
V
R
= 50 V;note 1
V
R
= 70 V;note 1
I
F
= 5 mA
f = 1 MHz; V
R
= 0
Min
Max
410
750
1
100
10
100
2
Unit
mV
mV
V
nA
A
ps
pF
Marking
Marking
77
www.kexin.com.cn
1
京公网安备 11010802033920号
EEWORLD
