SMD Type
PNP General Purpose Transistor
BC859W,BC860W
Transistors
IC
Features
Low current (max. 100 mA).
Low voltage (max. 45 V).
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Peak base current
Total power dissipation
Junction temperature
Storage temperature
Operating ambient temperature
Thermal resistance from junction to ambient
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
j
T
stg
R
amb
R
th j-a
BC859W
-30
-30
-5
-100
-200
-200
200
150
-65 to +150
-65 to +150
625
K/W
BC860W
-50
-45
Unit
V
V
V
mA
mA
mA
mW
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1
SMD Type
BC859W,BC860W
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
BC859W; BC860W
DC current gain
BC859BW; BC860BW
BC859CW; BC860CW
Collector-emitter saturation voltage
V
CE(sat)
I
C
= -10 mA; I
B
= -0.5 mA
I
C
= -100 mA; I
B
= -5 mA;
Base-emitter voltage *2
Collector capacitance
Emitter capacitance
Transition frequency
V
BE
C
C
C
e
f
T
I
C
= -2 mA; V
CE
= -5 V
I
C
= -10 mA; V
CE
= -5 V
I
E
= ie = 0; V
CB
= -10 V; f = 1 MHz
I
C
= ic = 0; V
EB
= -500 mV; f = 1 MHz
I
C
= -10 mA; V
CE
= -5 V; f = 100 MHz
I
C
= -200 ìA; V
CE
= -5 V; R
S
= 2 kÙ;f
= 10 Hz to 15.7 kHz
I
C
=-200 ìA; V
CE
= -5 V; R
S
= 2 kÙ;f =
1 kHz; B = 200 Hz
h
FE
I
C
= -2 mA; V
CE
= -5 V;
Symbol
I
CBO
I
CBO
I
EBO
Testconditons
I
E
= 0; V
CB
= -30 V
I
E
= 0; V
CB
= -30 V; T
j
= 150
I
C
= 0; V
EB
= -5 V
Transistors
IC
Min
Typ
Max
-15
-4
-100
Unit
nA
ìA
nA
220
220
420
800
475
800
-300
-650
mV
mV
mV
mV
pF
pF
MHz
4
dB
4
600
750
820
5
10
100
Noise figure
BC859W; BC860W;
BC859BW; BC860BW;
BC859CW; BC860CW
NF
*1. V
BEsat
decreases by about -1.7 mV/K with increasing temperature.
*2. V
BE
decreases by about -2 mV/K with increasing temperature.
h
FE
Classification
TYPE
Marking
TYPE
Marking
BC859W
4D
BC860W
4H
BC859BW
4B
BC860BW
4F
BC859CW
4C
BC860CW
4G
2
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