SMD Type
NPN Silicon Triple Diffused
2SC3233
TO-252
+0.15
1.50
-0.15
Transistors
Unit: mm
+0.1
2.30
-0.1
Features
Excellent Switching Times
+0.2
9.70
-0.2
+0.15
6.50
-0.15
+0.2
5.30
-0.2
0.50
+0.8
-0.7
+0.1
0.80
-0.1
+0.15
0.50
-0.15
High colletor Breakdown Voltage: V
CEO
=400V
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Base Current
Total Power dissipation Ta = 25
T
C
= 25
Junction temperature
Storage temperature
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Rating
500
400
7
2
0.5
1
20
150
-55 to +150
Unit
V
V
V
A
A
W
W
Electrical Characteristics Ta = 25
Parameter
collector cutoff current
emitter cutoff current
Emitter-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
DC current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Voltage
Switching time turn-0n time
Symbol
I
CBO
I
EBO
V
(BR)EBO
V
(BR)CEO
h
FE
V
CE(sat)
V
BE(sat)
tr
Testconditons
V
CB
=400V,I
E
=0
V
EB
=7V,I
C
=0
I
E
=1mA,I
C
=0
I
C
=10mA,I
B
=0
V
CE
=5V,I
C
=0.1A
V
CE
=5V,I
C
=1A
I
C
=0.1A,I
B
=0.2A
I
C
=0.1A,I
B
=0.2A
500
400
20
8
1
1.5
1.0
V
V
ìs
Min
Typ
Max
100
1
Unit
ìA
mA
V
V
Switching storage time
tstg
2.5
tf
Switching fall time
1
3
.8
0
t
r
=1.0ìs (Max.) tf=1.0ìs (Max.) at I
C
=0.8A
ìs
ìs
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