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2SC3632-Z

Description
1 A, 600 V, NPN, Si, POWER TRANSISTOR, TO-252AA
Categorysemiconductor    Discrete semiconductor   
File Size36KB,1 Pages
ManufacturerKEXIN
Websitehttp://www.kexin.com.cn/html/index.htm
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2SC3632-Z Overview

1 A, 600 V, NPN, Si, POWER TRANSISTOR, TO-252AA

2SC3632-Z Parametric

Parameter NameAttribute value
Number of terminals2
Transistor polarityNPN
Maximum collector current1 A
Maximum Collector-Emitter Voltage600 V
Processing package descriptionTO-252, MP-3Z, 3 PIN
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingtin lead
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structuresingle
Shell connectionCOLLECTOR
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Transistor typeuniversal power supply
Minimum DC amplification factor5
Rated crossover frequency30 MHz
SMD Type
NPN Silicon Epitaxial Transistor
2SC3632-Z
TO-252
+0.15
1.50
-0.15
Transistors
Unit: mm
+0.1
2.30
-0.1
+0.15
6.50
-0.15
+0.2
5.30
-0.2
0.50
+0.8
-0.7
+0.2
9.70
-0.2
High speed tf
0.5ìs
+0.1
0.80
-0.1
+0.15
0.50
-0.15
High voltage V
CEO
=600V
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current *1
Collector current
Total power dissipation
Junction temperature
Storage temperature
*1 pw 10ms,Duty cycle 50%
*2 when mounted on ceramic substrate of 7.5cm
2
X0.7mm
T
a
= 25 *2
Symbol
V
CBO
V
CES
V
EBO
I
CP
I
C
P
T
T
j
T
stg
Rating
600
600
7
2
1
2
150
-55 to +150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
collecotr cutoff current
Emitter cutoff current
DC Current Gain
Collector saturation voltage
Base to saturation voltage
Gain Bandwidth Product
Output capacitance
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
fT
cob
t
on
t
stg
t
f
Testconditons
V
CB
=600V,IE=0
V
EB
=7V,IC=0
V
CE
=5V,I
C
=100mA
V
CE
=5V,I
C
=100mA
I
C
=400mA,I
B
=80mA
IC=400mA,I
B
=80mA
V
CE
=5V,I
E
=-50mA
V
CB
=10V,I
E
=0A,f=1MHz
I
C
=0.5A,R
L
=500Ù
I
B1
=-I
B2
=0.1A
V
CC
=250V
30
5
55
7
0.35
0.9
30
14
0.1
4.0
0.2
0.5
5.0
0.5
1.0
1.2
V
V
MHz
pF
ìs
ìs
ìs
Min
Typ
Max
10
10
120
Unit
ìA
ìA
h
FE
Classification
Marking
hFE
M
30 to 60
L
40 to 80
K
60 to 120
3
.8
0
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