SMD Type
60V P-Channel MOSFET
KQB27P06
TO
-
263
+ .1
1 .2 7
-00.1
Transistors
IC
Unit: mm
+0.1
1.27
-0.1
+0.2
4.57
-0.2
Features
-27A, -60V, R
DS(on)
= 0.07
@V
GS
= -10 V
Low gate charge ( typical 33 nC)
+ .2
8 .7
-00.2
Low C
rss
( typical 120pF)
Fast switching
100% avalanche tested
+0.1
1.27
-0.1
0.1max
+0.1
0.81
-0.1
175
maximum junction temperature rating
+0.2
2.54
-0.2
2.54
5.08
+0.1
-0.1
+ .2
2 .5 4
-00.2
Improved d
v
/d
t
capability
+ .2
5 .2 8
-00.2
+ .2
1 5 .2 5
-00.2
0.4
+0.2
-0.2
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage
Drain Current Continuous T
C
=25
Drain Current Continuous T
C
=100
Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power dissipation @ T
a
=25
Power dissipation @ T
c
=25
Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering
purposes,1/8" from case for 5 seconds
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient *
Thermal Resistance Junction to Ambient
T
J
, T
STG
T
L
R
R
R
JC
JA
JA
Symbol
V
DSS
I
D
(Note 1)
I
DM
V
GSS
E
AS
I
AR
E
AR
d
v
/d
t
Rating
-60
-27
-19.1
-108
25
560
-27
12
-7
3.75
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/
(Note 1)
(Note 1)
(Note 3)
P
D
120
0.8
-55 to 175
300
1.25
40
62.5
/W
/W
/W
* When mounted on the minimum pad size recommended (PCB Mount)
5 .6 0
1 gate
1 Gate
2 drain
2 Drain
3 source
3 Source
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1
SMD Type
KQB27P06
Electrical Characteristics Ta = 25
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage, Forward
Gate-Body Leakage, Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode
Forward Current
Maximum Pulsed Drain-Source Diode Forward
Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.9mH, I
AS
= -27A, V
DD
= -25V, R
G
= 25
3. I
SD
-27A, d
i
/d
t
300A/
s, V
DD
, Starting T
J
= 25
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
tr
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
I
SM
V
SD
t
rr
Q
rr
V
GS
= 0 V, I
S
= -27 A
V
GS
= 0 V, I
S
= -27 A,
d
IF
/ d
t
= 100 A/
s (Note 4)
V
DS
= -48 V, I
D
= -27 A,V
GS
= -10
V(Note4,5)
V
DD
= -30V, I
D
= -13.5 A,R
G
= 25
(Note4,5)
V
DS
= -25 V, V
GS
= 0 V,f = 1.0 MHz
Symbol
B
VDSS
Testconditons
V
GS
= 0 V, I
D
= -250
I
D
= -250
A
Transistors
IC
Min
-60
Typ
Max
Unit
V
A, Referenced to 25
-0.06
-1
-10
-100
100
V/
A
A
nA
nA
V
V
DS
= -60 V, V
GS
= 0 V
V
DS
= -48V, T
C
=150
V
GS
= -25 V, V
DS
= 0 V
V
GS
= 25V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= -250
A
-2.0
0.055
12.4
1100
510
120
18
185
30
90
33
6.8
18
-4.0
0.07
V
GS
= -10 V, I
D
= -13.5A
V
DS
= -30 V, I
D
= -13.5 A
S
1400
660
155
45
380
70
190
43
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
-27
-108
-4.0
A
A
V
ns
c
105
0.41
B
VDSS
, Starting T
J
= 25
2%
4. Pulse Test : Pulse width
300 s, Duty cycle
5. Essentially independent of operating temperature
2
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51mcu
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