SMD Type
Schottky Barrier Rectifier Diodes
1N5817-1N5819
DO-214AC(SMA)
4.597
3.988
Diodes
Unit: mm
3.93
3.73
Features
For Surface Mounted Applications
Metal Silicon Junction, Majority Carrier Conduction
Low Power Loss, High Efficiency
High Forward Surge Current Capability
1.575
1.397
2
1
2.896
2.489
1.67
1.47
5.283
4.775
2.38
2.18
5.49
5.29
Recommended
Land Pattern
2.438
1.981
1.524
0.762
0.203
0.051
0.305
0.152
Maximum Ratings and Electrical Characteristics @ Ta = 25
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum InstantaneousForward Voltage at 1.0A
Maximum DC Reverse Current T
A
=25
At Rated DC Blocking Voltage
T
A
=100
C
J
R
JA
Symbol
1N5817
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
0.45
20
14
20
Rating
1N5818
30
21
30
1.0
40
0.55
0.5
6.0
110
88.0
-65 to +125
-65 to +150
0.55
1N5819
40
28
40
Unit
V
A
A
V
mA
pF
/W
Typical Junction Capacitance *1
Typical Thermal Resistance
*2
Operating Runction Temperature Range
Storage Temperature Range
*1 Measured at 1Mz and applied reverse voltage of 4.0V D.C.
*2 P.C.B mounted with 0.2X0.2"(5.0x5.0mm)copper pad areas
T
J
T
STG
Marking
Part NO.
Marking
1N5817
SS12
1N5818
SS13
1N5819
SS14
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Embedded System
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