KAW56 datasheet, PDF - EEWORLD Datasheet

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KAW56: Description0.25 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236; Categorysemiconductor Discrete semiconductor; File Size37KB，1 Pages; ManufacturerKEXIN; Websitehttp://www.kexin.com.cn/html/index.htm

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KAW56 Overview

0.25 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236

KAW56 Parametric

Parameter Name	Attribute value
Number of terminals	3
Number of components	2
Processing package description	ROHS COMPLIANT, PLASTIC PACKAGE-3
state	ACTIVE
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
Terminal location	pair
Packaging Materials	Plastic/Epoxy
structure	COMMON ANODE, 2 ELEMENTS
Diode component materials	silicon
Maximum power consumption limit	0.3100 W
Diode type	Signal diode
Maximum reverse recovery time	0.0060 us
Maximum repetitive peak reverse voltage	85 V
Maximum average forward current	0.2500 A

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SMD Type

Dual Surface Mount Switching Diode

KAW56

(BAW56)

SOT-23

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Diodes

Unit: mm

Features

+0.1

2.4

-0.1

Fast Switching Speed

Surface Mount Package Ideally Suited for

Automatic Insertion

For General Purpose Switching Applications

+0.1

1.3

-0.1

1

2

0.95

+0.1

-0.1

+0.1

1.9

-0.1

0.55

0.4

3

+0.05

0.1

-0.01

0.97

+0.1

0.38

-0.1

High Conductance

0-0.1

+0.1

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Non-Repetitive Peak Reverse Voltage

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

Forward Continous Current

Non-Repetitive Peak Forward Surge Current @ t = 1.0

@ t = 1.0s

Power Dissipation

Thermal Resistance Junction to Ambient Air

Operating and Storage Temperature Range

P

d

R

JA

Symbol

V

RM

V

RRM

V

RWM

V

R

V

R(RMS)

I

FM

s

I

FSM

Rating

100

Unit

V

75

V

53

300

2.0

1.0

350

357

-65 to +150

V

mA

A

mW

/W

T

,

T

STG

Electrical Characteristics Ta = 25

Parameter

Symbol

I

F

= 1.0mA

Forward Voltage

V

F

I

F

= 10mA

I

F

= 50mA

I

F

= 150mA

V

R

= 75V

Peak Reverse Current

I

RM

V

R

= 75V, T

j

= 150

V

R

= 25V, T

j

= 150

V

R

= 20V

Junction Capacitance

Reverse Recovery Time

C

j

t

rr

V

R

= 0, f = 1.0MHz

I

F

= I

R

= 10mA,I

rr

= 0.1 X I

R

, R

L

= 100

Testconditons

Min

Typ

Max

0.715

0.855

1.0

1.25

2.5

50

30

25

2

4

A

nA

pF

ns

V

Unit

Marking

KJD

www.kexin.com.cn

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