SMD Type
Silicon PNP Epitaxial Planar Type
2SA1034
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
IC
Unit: mm
+0.1
2.4
-0.1
Low noise voltage NV.
High forward current transfer ratio h
FE.
Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing and the magazine packing.
+0.1
1.3
-0.1
Features
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
-35
-35
-5
-50
-100
200
150
-55 to +150
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Base-emitter voltage *
Collector-base cutoff current
Collector-emitter cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage *
Transition frequency
Noise voltage
* Pulse measurement.
Symbol
V
CBO
V
CEO
V
EBO
V
BE
I
CBO
I
CEO
h
FE
Testconditons
I
C
= -10 ìA, I
E
= 0
I
C
= -2 mA, I
B
= 0
I
E
= -10 ìA, I
C
= 0
V
CE
= -1 V, I
C
= -100 mA
V
CB
= -10 V, I
E
= 0
V
CE
= -10 V, I
B
= 0
V
CE
= -5 V, I
C
= -2 mA
180
Min
-35
-35
-5
-0.7
-1.0
-0.1
-1
700
-0.6
200
150
V
MHz
mV
Typ
Max
Unit
V
V
V
V
ìA
ìA
V
CE(sat)
I
C
= -100 mA, I
B
= -10 mA
f
T
NV
V
CB
= -5 V, I
E
= 2 mA, f = 200 MHz
V
CE
= -10 V, I
C
= -1 mA, G
V
= 80 dB
R
g
= 100 kÙ, F
unction
= FLAT
h
FE
Classification
Marking
h
FE
FR
180 360
FS
260 520
FT
360 700
0-0.1
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