SMD Type
Silicon N Cannel MOSFET
2SK3147S
IC
MOSFET
Features
Low on-resistance
R
DS
= 0.1
typ.
6.50
+0.2
5.30
-0.2
+0.15
-0.15
TO-252
+0.15
1.50
-0.15
Unit: mm
2.30
+0.8
0.50
-0.7
+0.1
-0.1
High speed switching
+0.2
9.70
-0.2
+0.15
0.50
-0.15
+0.1
0.80
-0.1
0.127
max
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
4 V gate drive device can be driven from 5 V source
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation
Channel temperature
Storage temperature
* PW
10 s,Duty Cycle 1%
Symbol
V
DSS
V
GSS
I
D
I
dp
*
P
D
T
ch
T
stg
Rating
100
20
5
20
20
150
-55 to +150
Unit
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate to source cut off voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
I
DSS
I
GSS
V
GS(off)
Y
fs
R
DS(on)
C
iss
C
oss
C
rss
t
on
t
r
t
off
tf
I
D
=3A,V
GS(on)
=10V,R
L
=10
V
DS
=10V,V
GS
=0,f=1MHZ
Testconditons
V
DS
=100V,V
GS
=0
V
GS
= 16V,V
DS
=0
V
DS
=10V,I
D
=1mA
V
DS
=10V,I
D
=3A
V
GS
=10V,I
D
=3A
V
GS
=4V,I
D
=3A
1..0
3.5
6
0.1
0.13
420
185
100
10
35
110
60
0.13
0.18
pF
pF
pF
ns
ns
ns
ns
Min
Typ
Max
10
10
2.5
Unit
A
A
V
S
3
.8
0
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