SMD Type
Silicon Epitaxial Planar Diode
1SS379
SOT-23
Diodes
Unit: mm
Low forward voltage :V
F
=1.0V(Typ.)
+0.1
2.4
-0.1
Low reverse current: I
R
=0.1nA(Typ.)
Small total capacitance: C
T
=3.0pF (Typ.)
+0.1
1.3
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
Features
+0.1
2.9
-0.1
+0.1
0.4
-0.1
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Maximum (peak) reverse voltage
Reverse voltage
Average forward current *
Maximum (peak) forward current *
Surge current (10 ms) *
Power dissipation
Junction Temperature
Storage Temperature
* Unit Rating. Total Rating=Unit Rating X0.7
Symbol
V
RM
V
R
I
O
I
FM
I
FSM
P
T
j
T
stg
Rating
85
80
100
300
2
150
125
-55 + 125
Unit
V
V
mA
mA
A
mW
Electrical Characteristics Ta = 25
Parameter
Forward voltage
Reverse current
Total capacitance
Symbol
V
F(1)
I
R
C
T
Test Conditions
I
F
= 100mA
V
R
= 80V
V
R
= 0, f = 1.0 MHz
Min
Typ
1.0
0.1
3.0
Max
1.3
10
6.0
Unit
V
A
pF
Marking
Marking
P9
+0.1
0.38
-0.1
0-0.1
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