SMD Type
NPN Silicon Planar
Medium Power High Gain Transistor
FZT1053A
SOT-223
Transistors
Unit: mm
+0.2
3.50
-0.2
Features
V
CEO
= 75V.
4.5 Amp continuous current.
10 Amp pulse current.
Low saturation voltage.
High gain.
Extremely low equivalent on-resistance; R
CE(sat)
= 78mÙ at 4.5A.
1
+0.2
6.50
-0.2
0
.1max
+0.05
0.90
-0.05
+0.1
3.00
-0.1
+0.2
0.90
-0.2
+0.3
7.00
-0.3
4
2
2.9
4.6
3
+0.1
0.70
-0.1
1 base
2 collector
3 emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Peak pulse current
Continuous collector current
Base current
Power dissipation
Operating and storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
j,
T
stg
Rating
150
75
7.5
4.5
10
500
2.5
-55 to +150
Unit
V
V
V
A
A
mA
W
+0.15
1.65
-0.15
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1
SMD Type
FZT1053A
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
Collector-base cut-off current
Collector-emitter cut-off current
Emitter Cut-Off Current
Symbol
V
(BR)CBO
I
C
=100ìA
V
(BR)CEO
I
C
=10mA
V
(BR)EBO
I
E
=100ìA
I
CBO
I
CES
I
EBO
V
CB
=120V
V
CE
=120V
V
EB
=4V
Testconditons
Transistors
Min
150
75
7.5
Typ
250
100
8.8
0.9
1.5
0.3
21
55
150
160
350
900
825
Max
Unit
V
V
V
10
10
10
30
75
200
210
440
1000
950
nA
nA
nA
Collector-emitter saturation voltage *
I
C
=0.2A, I
B
=20mA
I
C
=0.5A, I
B
=20mA
V
CE(
sat) I
C
=1A, I
B
=10mA
I
C
=2A, I
B
=100mA
I
C
=4.5A, I
B
=200mA
V
BE(
sat) I
C
=3A, I
B
=100mA
V
BE(on
) I
C
=3A, V
CE
=2V
I
C
=10mA, V
CE
=2V*
I
C
=0.5A, V
CE
=2V*
270
300
300
40
mV
Base-emitter saturation voltage *
Base-emitter ON voltage *
mV
mV
440
450
450
60
20
140
21
162
900
30
MHz
pF
ns
ns
1200
Static Forward Current Transfer Ratio
h
FE
I
C
=1A, V
CE
=2V*
I
C
=4.5A, V
CE
=2V*
I
C
=10A, V
CE
=2V*
Transitional frequency
Output capacitance
Turn-on time
Turn-off time
* Pulse test: tp = 300 ìs; d
0.02.
f
T
C
obo
t
(on)
t
(off)
I
C
=50mA, V
CE
=10V f=100MHz
V
CB
=10V, f=1MHz
I
C
=2A, V
CC
=50V
I
B1
=I
B2
=20mA
2
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