SMD Type
Quad Surface Mount Low Leakage Diode
KAV199DW
(BAV199DW)
SO
T
-363
+0.1
1.3
-0.1
0.65
Diodes
Unit: mm
Automatic Insertion
Very Low Leakage Current
+0.1
0.3
-0.1
+0.1
2.1
-0.1
0.36
+0.05
0.1
-0.02
Absolute Maximum Ratings Ta = 25
Parameter
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
RMS reverse voltage
Forward Continuous Current
Single diode
I
FM
Double diode
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Surge Current @ t = 1.0 s
@ t = 1.0ms
@ t = 1.0s
Power dissipation
Typical Thermal Resistance Junction to Ambient
Operating and storage temperature range
P
D
R
èJA
T
j
,T
stg
I
FSM
I
FRM
140
500
4.0
1.0
0.5
200
625
-65 to +150
mW
/W
A
mA
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
60
160
mA
V
85
V
Rating
Unit
Electrical Characteristics Ta = 25
Parameter
Reverse Breakdown Voltage
Symbol
V
(BR)R
I
R
= 100
I
F
= 10mA
I
F
= 50mA
I
F
= 150mA
Leakage Current
Junction Capacitance
Reverse Recovery Time
I
R
C
J
t
rr
V
R
= 75V
V
R
= 75V,T
J
=150
V
R
= 0, f = 1.0MHz
I
F
=I
R
=10mA,I
rr
=0.1xI
R
,R
L
=100
2
3.0
A
Testconditons
Min
85
0.90
1.0
1.1
1.25
5.0
80
A
pF
s
V
Typ
Max
Unit
V
I
F
= 1.0mA
Forwarad voltage
V
F
Marking
Marking
K52
+0.05
0.95
-0.05
0.1max
+0.1
1.25
-0.1
+0.15
2.3
-0.15
Surface Mount Package Ideally Suited for
0.525
Features
www.kexin.com.cn
1
Microchip MCU
京公网安备 11010802033920号
EEWORLD
