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BS62LV8001FIG70

Description
Standard SRAM, 1MX8, 70ns, CMOS, PBGA48, 9 X 12 MM, GREEN, BGA-48
Categorystorage    storage   
File Size263KB,9 Pages
ManufacturerBrilliance
Environmental Compliance  
Download Datasheet Parametric View All

BS62LV8001FIG70 Overview

Standard SRAM, 1MX8, 70ns, CMOS, PBGA48, 9 X 12 MM, GREEN, BGA-48

BS62LV8001FIG70 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeBGA
package instructionTFBGA, BGA48,6X8,30
Contacts48
Reach Compliance Codeunknown
ECCN code3A991.B.2.A
Maximum access time70 ns
I/O typeCOMMON
JESD-30 codeR-PBGA-B48
length12 mm
memory density8388608 bit
Memory IC TypeSTANDARD SRAM
memory width8
Humidity sensitivity level3
Number of functions1
Number of terminals48
word count1048576 words
character code1000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize1MX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA48,6X8,30
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply2.5/5 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum standby current0.0000013 A
Minimum standby current1.5 V
Maximum slew rate0.061 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch0.75 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width9 mm
Base Number Matches1
BSI
FEATURES
Very Low Power/Voltage CMOS SRAM
1M X 8 bit
BS62LV8001
• Wide Vcc operation voltage : 2.4V ~ 5.5V
• Very low power consumption :
Vcc = 3.0V C-grade: 30mA (@55ns) operating current
I -grade: 31mA (@55ns) operating current
C-grade: 24mA (@70ns) operating current
I -grade: 25mA (@70ns) operating current
1.5uA (Typ.) CMOS standby current
Vcc = 5.0V C-grade: 75mA (@55ns) operating current
I -grade: 76mA (@55ns) operating current
C-grade: 60mA (@70ns) operating current
I -grade: 61mA (@70ns) operating current
8.0uA (Typ.) CMOS standby current
• High speed access time :
-55
55ns
-70
70ns
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE1, CE2 and OE options
GENERAL DESCRIPTION
The BS62LV8001 is a high performance , very low power CMOS Static
Random Access Memory organized as 1,048,576 words by 8 bits and
operates from a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
1.5uA at 3V/25
o
C and maximum access time of 55ns at 3.0V/85
o
C.
Easy memory expansion is provided by an active LOW chip enable (CE1)
, an active HIGH chip enable (CE2) and active LOW output enable (OE)
and three-state output drivers.
The BS62LV8001 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS62LV8001 is available in 48B BGA and 44L TSOP2 packages.
PRODUCT FAMILY
PRODUCT
FAMILY
BS62LV8001EC
BS62LV8001FC
BS62LV8001EI
BS62LV8001FI
OPERATING
TEMPERATURE
+0
O
C to +70
O
C
-40
O
C to +85
O
C
Vcc
RANGE
2.4V ~ 5.5V
2.4V ~ 5.5V
SPEED
( ns )
55ns : 3.0~5.5V
70ns : 2.7~5.5V
( I
CCSB1
, Max )
POWER DISSIPATION
STANDBY
Operating
( I
CC
, Max )
PKG TYPE
TSOP2-44
BGA-48-0912
TSOP2-44
BGA-48-0912
Vcc=3V
Vcc=5V
Vcc=3V
70ns
Vcc=5V
70ns
55 / 70
55 / 70
5uA
10uA
55uA
110uA
24mA
25mA
60mA
61mA
PIN CONFIGURATIONS
A4
A3
A2
A1
A0
CE1
NC
NC
DQ0
DQ1
VCC
GND
DQ2
DQ3
NC
NC
WE
A19
A18
A17
A16
A15
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
1
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
5
6
A5
A6
A7
OE
CE2
A8
NC
NC
DQ7
DQ6
GND
VCC
DQ5
DQ4
NC
NC
A9
A10
A11
A12
A13
A14
FUNCTIONAL BLOCK DIAGRAM
BS62LV8001EC
BS62LV8001EI
A13
A17
A15
A18
A16
A14
A12
A7
A6
A5
A4
Address
Input
Buffer
22
Row
Decoder
2048
Memory Array
2048 X 4096
4096
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CE1
CE2
WE
OE
Vdd
Gnd
8
Data
Input
Buffer
8
Column I/O
Write Driver
Sense Amp
512
Column Decoder
18
Control
Address Input Buffer
2
3
4
A
NC
NC
OE
A0
A1
A2
CE2
B
NC
A3
A4
CE1
NC
NC
8
C
D0
NC
A5
A6
Data
Output
Buffer
8
D4
D
VSS
D1
A17
A7
D5
VCC
E
VCC
D3
D2
VCC
A16
D6
VSS
F
NC
A14
A15
NC
D7
A11A9 A8 A3 A2 A1 A0A10 A19
G
NC
NC
A12
A13
WE
NC
H
A18
A8
A9
A10
A11
A19
48-ball BGA top view
Brilliance Semiconductor, Inc
. reserves the right to modify document contents without notice.
R0201-BS62LV8001
1
Revision 2.1
Jan.
2004
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