SMD Type
HEXFET Power MOSFET
KRF7220
IC
IC
Features
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Absolute Maximum Ratings Ta = 25
Parameter
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -4.5V @ T
a
= 25
Continuous Drain Current, V
GS
@ -4.5V @ T
a
= 70
Pulsed Drain Current *1
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy *4
Gate-to-Source Voltage
Junction and Storage Temperature Range
Maximum Junction-to-Ambient *3
E
AS
V
GS
T
J
, T
STG
R
JA
Symbol
V
DS
I
D
I
D
I
DM
Rating
-14
11
8.8
88
2.5
1.6
0.02
110
12
-55 to + 150
50
Unit
V
A
@T
a
= 25
@T
a
= 70
P
D
P
D
W
W
W/
mJ
V
/W
*1 Repetitive rating; pulse width limited by max. junction temperature.
*3 Surface mounted on FR-4 board, t
10sec.
*4 Starting T
J
= 25 , L = 1.8mH,R
G
= 25 , I
AS
= 11A
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1
SMD Type
KRF7220
Electrical Characteristics Ta = 25
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
*1 Pulse width
300 s; duty cycle
2%.
Body Diode)
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
I
S
I
SM
V
SD
t
rr
Q
rr
T
J
= 25 , I
S
= -2.5A, V
GS
= 0V*1
T
J
= 25 , I
F
=-2.5A
d
i
/d
t
= 100A/
s*1
160
147
Symbol
V
(BR)DSS
V(BR)DSS
/
IC
IC
Testconditons
V
GS
= 0V, I
D
= -5mA
T
J
I
D
= -1mA,Reference to 25
V
GS
= -4.5V, I
D
= -11A*1
V
GS
= -2.5V, I
D
= -8.8A*1
Min
-14
Typ
Max
Unit
V
-0.006
0.0082 0.012
0.0125 0.02
-0.6
8.4
-5.0
-100
-100
100
84
13
37
19
420
140
125
20
55
V/
R
DS(on)
V
GS(th)
g
fs
I
DSS
V
DS
= V
GS
, I
D
= -250 A
V
DS
= -10V, I
D
= -11A*1
V
DS
= -11.2V, V
GS
= 0V
V
DS
= -11.2V, V
GS
= 0V, T
J
= 70
V
S
A
I
GSS
V
GS
= -12V
V
GS
= 12V
I
D
= -11A
V
DS
= -10V
V
GS
= -5.0V,*1
V
DD
= -10V
I
D
= -11A
R
G
= 6.2
R
D
= 0.91
V
GS
= 0V
V
DS
= -10V
f = 1.0MHz
*1
nA
nC
ns
1040
8075
4400
4150
-2.5
A
-88
-1.2
240
220
V
ns
C
pF
Body Diode) *2
*2 Repetitive rating; pulse width limited by max. junction temperature.
2
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