SMD Type
Transistors
IC
250V N-Channel Enhancement Mode MOSFET
KVN4525Z
SOT-89
+0.1
4.50
-0.1
+0.1
1.50
-0.1
Unit: mm
Features
High voltage
Low on-resistance
1.80
+0.1
-0.1
+0.1
2.50
-0.1
Fast switching speed
Low gate drive
Low threshold
SOT89 package
1
+0.1
0.48
-0.1
2
3
+0.1
0.80
-0.1
+0.1
0.53
-0.1
+0.1
0.44
-0.1
+0.1
2.60
-0.1
+0.1
4.00
-0.1
+0.1
3.00
-0.1
+0.1
0.40
-0.1
1. Base
1. Source
2. Collector
2. Drain
3. Emiitter
3. Gate
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current (V
GS
=10V; T
A
=25 )*1
(V
GS
=10V; T
A
=70 )*1
Pulsed Drain Current *3
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Power Dissipation at T
A
=25
Linear Derating Factor
Operating and Storage Temperature Range
Junction to Ambient *1
Junction to Ambient*2
T
j
:T
stg
R
R
JA
JA
Symbol
V
DSS
V
GS
I
D
I
D
I
DM
I
S
I
SM
P
D
Rating
250
40
240
192
1.44
1.1
1.44
1.2
9.6
-55 to +150
103
50
Unit
V
V
mA
mA
A
A
A
W
mW/
*1
/W
/W
*1 For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of
single sided 1oz copper, in still air conditions
*2 For a device surface mounted on FR4 PCB measured at t
5 secs.
*3 Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
www.kexin.com.cn
1
SMD Type
KVN4525Z
Electrical Characteristics Ta = 25
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
Testconditons
I
D
=1mA, V
GS
=0V
V
DS
=250V, V
GS
=0V
V
GS
= 40V, V
DS
=0V
I
D
=1mA, V
DS
= V
GS
V
GS
=10V, I
D
=500mA
Static Drain-Source On-State Resistance *1
R
DS(on)
V
GS
=4.5V, I
D
=360mA
V
GS
=2.4V, I
D
=20mA
Forward Transconductance *3
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
Diode Forward Voltage *1
Reverse Recovery Time *3
Reverse Recovery Charge *3
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
tf
Q
g
Q
gs
Q
gd
V
SD
t
rr
Q
rr
T
j
=25 , I
S
=360mA,V
GS
=0V
T
j
=25 , I
F
=360mA,
d
i
/d
t
=100A/
2% .
s
V
DS
=25V,V
GS
=10V,I
D
=360mA *2,3
V
DD
=50V, I
D
=-200mA
R
G
=6.0 , R
D
=4.4
*2,3
V
DS
=25 V, V
GS
=0V,f=1MHz
V
DS
=10V,I
D
=0.3A
0.3
0.8
Min
250
Transistors
IC
Typ
285
35
1
1.4
5.6
5.9
6.4
475
72
11
3.6
1.25
1.70
11.40
3.5
2.6
0.2
0.5
Max
Unit
V
500
100
1.8
8.5
9.0
9.5
nA
nA
V
ms
pF
pF
pF
ns
ns
ns
ns
3.65
0.28
0.70
0.97
nC
nC
nC
V
ns
nC
186
34
260
48
*1 Measured under pulsed conditions. Width=300 s. Duty cycle
*2 Switching characteristics are independent of operating junction temperature.
*3 For design aid only, not subject to production testing.
Marking
Marking
N52
2
www.kexin.com.cn
京公网安备 11010802033920号
EEWORLD
