BD140-10LEADFREE datasheet, PDF

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BD140-10LEADFREE: DescriptionPower Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size341KB，2 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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BD140-10LEADFREE Overview

Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN

BD140-10LEADFREE Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	SIP
package instruction	TO-126, 3 PIN
Contacts	3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	1.5 A
Collector-emitter maximum voltage	80 V
Configuration	SINGLE
Minimum DC current gain (hFE)	63
JEDEC-95 code	TO-126
JESD-30 code	R-PSFM-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal surface	MATTE TIN (315)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	10
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	160 MHz
Base Number Matches	1

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BD136

BD138

BD140

SILICON

PNP TRANSISTORS

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BD136, BD138,

and BD140 are silicon PNP epitaxial planar transistors

designed for audio amplifier and switching applications.

MARKING: FULL PART NUMBER

TO-126 CASE

MAXIMUM RATINGS:

(TC=25°C unless otherwise noted)

SYMBOL

Collector-Base Voltage

VCBO

Collector-Emitter Voltage

VCEO

Emitter-Base Voltage

VEBO

Continuous Collector Current

Peak Collector Current

ICM

Continuous Base Current

Peak Base Current

IBM

Power Dissipation (Tmb<70°C)

Power Dissipation (TA=25°C)

Operating and Storage Junction Temperature

TJ, Tstg

Thermal Resistance

Jmb

Thermal Resistance

ELECTRICAL

SYMBOL

ICBO

IEBO

BVCEO

VCE(SAT)

VBE(ON)

hFE

BD136

BD138

BD140

100

5.0

1.5

2.0

0.5

1.0

8.0

1.25

-65 to +150

100

UNITS

°C

°C/W

CHARACTERISTICS:

(TC=25°C unless otherwise noted)

TEST CONDITIONS

MIN

TYP

VCB=30V

VCB=30V (TC=125°C)

VEB=5.0V

IC=30mA (BD136)

IC=30mA (BD138)

IC=30mA (BD140)

IC=500mA, IB=50mA

VCE=2.0V, IC=500mA

VCE=2.0V, IC=5.0mA

VCE=2.0V, IC=150mA

VCE=2.0V, IC=500mA

VCE=5.0V, IC=50mA, f=100MHz

160

BD136-10

BD138-10

BD140-10

MIN

MAX

160

MAX

100

0.5

1.0

250

UNITS

μA

MHz

SYMBOL

hFE

TEST CONDITIONS

VCE=2.0V, IC=150mA

BD136-16

BD138-16

BD140-16

MIN

MAX

100

250

R3 (13-March 2014)

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