BC846ATTR datasheet, PDF - EEWORLD Datasheet

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BC846ATTR: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, ULTRAMINI-3; CategoryDiscrete semiconductor The transistor; File Size353KB，2 Pages; ManufacturerCentral Semiconductor

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BC846ATTR Overview

Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, ULTRAMINI-3

BC846ATTR Parametric

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PDSO-F3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	65 V
Configuration	SINGLE
Minimum DC current gain (hFE)	110
JESD-30 code	R-PDSO-F3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	FLAT
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
Base Number Matches	1

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BC846T SERIES

BC847T SERIES

SURFACE MOUNT

NPN SILICON TRANSISTOR

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BC846T and

BC847T Series types are NPN Silicon Transistors

manufactured by the epitaxial planar process, epoxy

molded in a surface mount package, designed for

general purpose switching and amplifier applications.

MARKING CODE: SEE MARKING CODE TABLE

ON FOLLOWING PAGE

SOT-523 CASE

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Peak Base Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL

SYMBOL

ICBO

IEBO

BVCBO

BVCEO

BVEBO

VCE(SAT)

VBE(ON)

SYMBOL

VCBO

VCEO

VEBO

ICM

IBM

TJ, Tstg

BC847T

BC846T

5.0

100

200

100

250

-65 to +150

500

UNITS

°C

°C/W

CHARACTERISTICS:

(TA=25°C unless

TEST CONDITIONS

VCB=30V

VCB=30V, TA=150°C

VEB=5.0V

IC=10μA (BC847T)

IC=10μA (BC846T)

IC=10mA (BC847T)

IC=10mA (BC846T)

IE=10μA

IC=10mA, IB=0.5mA

IC=100mA, IB=5.0mA

IC=2.0mA, VCE=5.0V

IC=10mA, VCE=5.0V

VCE=5.0V, IC=10mA, f=100MHz

VCB=10V, IE=0, f=1.0MHz

VEB=0.5V, IC=0, f=1.0MHz

VCE=5.0V, IC=200μA,

RS=2.0KΩ f=1.0KHz, BW=200Hz

otherwise noted)

MIN

TYP

MAX

5.0

100

5.0

0.20

0.40

0.70

0.77

1.5

BC846BT

BC847BT

MIN

MAX

200

450

0.58

100

UNITS

μA

MHz

BC847CT

MIN

MAX

420

800

hFE

VCE=5.0V, IC=2.0mA

BC846AT

BC847AT

MIN

MAX

110

220

R1 (20-November 2009)

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