SMD Type
MOSFET
P-Channel 2.5V Specified Enhancement
Mode Field Effect Transistor
KDB4020P
(FDB4020P)
TO
-
263
+0.1
1.27
-0.1
Unit: mm
+0.1
1.27
-0.1
+0.2
4.57
-0.2
Features
-16 A, -20 V. R
DS(on)
= 0.08 Ù @ V
GS
= -4.5 V
R
DS(on)
= 0.11 Ù @ V
GS
= -2.5 V.
+0.2
8.7
-0.2
Critical DC electrical parameters specified at elevated
temperature.
High density cell design for extremely low R
DS(on)
.
+0.1
1.27
-0.1
0.1max
+0.1
0.81
-0.1
+0.2
5.28
-0.2
2.54
+0.2
-0.2
+0.1
5.08
-0.1
+0.2
2.54
-0.2
+0.2
15.25
-0.2
2.54
+0.2
0.4
-0.2
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
T
C
=25
Symbol
V
DSS
V
GSS
I
D
I
dp
P
D
R
èJC
R
èJA
T
ch
T
stg
Rating
-20
8
-16
-48
37.5
0.25
4
40
175
-55 to +175
Unit
V
V
A
A
W
W/
/W
/W
Drain current-pulsed
Power dissipation
Derate above 25
Thermal Resistance, Junction-to- Case
Thermal Resistance Junction to Ambient
Channel temperature
Storage temperature
5.60
1 Gate
2 Drain
3 Source
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1
SMD Type
MOSFET
KDB4020P
(FDB4020P)
Electrical Characteristics Ta = 25
Parameter
Drain to source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Symbol
V
DSS
I
DSS
I
GSS
V
GS(th)
I
D
=250ìA
Testconditons
V
GS
=0V
Min
-20
-1
100
-0.4
-0.58
0.068
0.098
-1
0.08
0.13
Ù
Typ
Max
Unit
V
A
nA
V
V
DS
=-16V,V
GS
=0,T
C
=25
V
GS
= 8V,V
GS
=0V
V
DS
= V
GS
, I
D
= -250ìA
V
GS
=-4.5V,I
D
=-8A
Drain to source on-state resistance
R
DS(on)
V
GS
=-4.5V,I
D
=-8A,T
J
=125
V
GS
=-2.5V,I
D
=-7A
0.096 0.110
-20
14
665
A
S
pF
pF
pF
13
nC
nC
nC
16
38
80
45
-16
-48
ns
ns
ns
ns
A
A
V
On-State Drain Current
Forward Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Maximum Continuous Drain-Source
Diode Forward Current
Maximum Pulsed Drain-Source Diode
Forward Current
Drain-Source Diode Forward Voltage
* Pulse Test: Pulse Width
I
D(on)
g
FS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
on
t
r
t
off
tf
I
S
I
SM
V
SD
V
GS
= -4.5 V, V
DS
= -5 V
V
DS
= -5 V, I
D
= -8 A
V
DS
=-10V,V
GS
=0,f=1MHZ
270
70
V
DS
= -5 V,
I
D
= -16 A, V
GS
= -4.5 V *
9.5
1.3
2.2
8
V
DD
= -5 V, I
D
= -1 A,
V
GS
= -4.5 V, R
GEN
= 6 Ù*
24
50
29
V
GS
= 0 V, I
S
= -16 A *
2.0%
-1.2
300 ìs, Duty Cycle
2
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