SMD Type
Transistors
Surface Mount PNP Silicon Transistor
KXT5401
(CXT5401)
SOT-89
+0.1
4.50
-0.1
+0.1
1.50
-0.1
Unit: mm
1.80
+0.1
-0.1
+0.1
2.50
-0.1
+0.1
0.48
-0.1
+0.1
0.53
-0.1
High current (max. 500mA).
Low voltage (max. 150 V).
+0.1
4.00
-0.1
Features
+0.1
0.80
-0.1
+0.1
0.44
-0.1
+0.1
2.60
-0.1
+0.1
3.00
-0.1
+0.1
0.40
-0.1
1. Base
2. Collector
3. Emiitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
power dissipation
thermal resistance Junction- to-ambient
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
R
JA
Rating
-160
-150
-5
-500
1.2
104
150
-65 to +150
Unit
V
V
V
mA
W
/W
T
j
T
stg
Electrical Characteristics Ta = 25
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
C
=-100
A
Testconditons
Min
-160
-150
-5.0
-50
-50
50
60
50
-0.2
-0.5
-1.0
-1.0
6.0
100
300
V
V
V
V
pF
MHz
240
Typ
Max
Unit
V
V
V
nA
A
I
C
=-1.0mA
I
E
=-10
A
V
CB
=- 120 V, I
E
= 0
V
CB
=- 120 V, T
A
=100
I
C
= -1.0 mA; V
CE
= -5.0 V
DC current gain
h
FE
I
C
= -10mA; V
CE
=- 5.0V
I
C
= -50 mA; V
CE
= -5.0V
Collector to emitter saturation voltage
V
CE(sat)
I
C
=- 10 mA; I
B
= -1.0mA
I
C
= -50 mA; I
B
= -5.0mA
Base to emitter saturation voltage
Output capacitance
Transition frequency
V
BE(sat)
C
ob
f
T
I
C
= -10 mA; I
B
= -1.0mA
I
C
= -50 mA; I
B
=- 5.0mA
V
CB
=-10 V, I
E
= 0,f=1.0MHz
I
C
= -10 mA; V
CE
=-10V; f = 100 MHz
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