SMD Type
P-Channel MOS FET
For High-Speed Switching
2SJ181S
TO-252
MOSFET
Unit: mm
+0.1
2.30
-0.1
+0.8
0.50
-0.7
Features
Low on-resistance
High speed switching
+0.2
9.70
-0.2
+0.15
1.50
-0.15
+0.15
6.50
-0.15
+0.2
5.30
-0.2
+0.1
0.80
-0.1
Suitable for switching regulator and DC-DC converter
+0.28
1.50
-0.1
+0.25
2.65
-0.1
No secondary breakdown
2.3
+0.15
4.60
-0.15
+0.15
0.50
-0.15
Low drive current
0.127
max
+0.15
5.55
-0.15
+0.1
0.60
-0.1
1Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current *
Channel dissipation (Tc=25
Channel temperature
Storage temperature
* PW
10 ìs, duty cycle
1%
)
Symbol
V
DSS
V
GSS
I
D(DS)
I
D(pulse)
P
ch
T
ch
T
stg
Rating
-600
15
-0.5
-1
20
150
-55 to +150
Unit
V
V
A
A
W
3
.8
0
www.kexin.com.cn
1
SMD Type
2SJ181S
Electrical Characteristics Ta = 25
Parameter
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static Drain to source on stateresistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse recovery time
Symbol
V
DSS
V
GSS
I
GSS
I
DSS
Testconditons
I
D
= -10 mA, V
GS
= 0
I
G
=
V
GS
=
100
A, V
DS
= 0
Min
-600
15
MOSFET
Typ
Max
Unit
V
V
12 V, V
DS
= 0
10
-100
-2
15
0.3
0.45
220
55
13
-4
25
µA
µA
V
V
DS
= -500 V, V
GS
= 0
V
GS(off)
I
D
= -1 mA, V
DS
= -10 V
R
DS(on)
I
D
= -0.3 A, V
GS
= -10 V
|y
fs
|
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
I
F
= -0.5 A, V
GS
= 0
I
F
= -0.5 A, V
GS
= 0, diF/dt = 50 A/
s
I
D
= -0.3 A, V
GS
= -10 V,
R
L
= 100 Ù
I
D
= -0.3 A, V
DS
= -20 V
V
DS
= -10 V, V
GS
= 0,
f = 1 MHz
S
pF
pF
pF
ns
ns
ns
ns
V
ns
7
20
35
35
-0.85
230
2
www.kexin.com.cn
京公网安备 11010802033920号
EEWORLD
