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BDW23C

Description
6 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220
Categorysemiconductor    Discrete semiconductor   
File Size83KB,2 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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BDW23C Overview

6 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220

INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
BDW23/A/B/C
DESCRIPTION
·Collector
Current -I
C
=
6A
·High
DC Current Gain-h
FE
= 750(Min)@ I
C
= 2A
·Complement
to Type BDW24/A/B/C
APPLICATIONS
·Designed
for hammer drivers, audio amplifiers applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
BDW23
BDW23A
BDW23B
BDW23C
BDW23
BDW23A
BDW23B
BDW23C
V
EBO
I
C
I
CM
I
B
B
VALUE
45
60
UNIT
V
CER
Collector-Emitter
Voltage
V
80
100
45
60
V
80
100
5
6
8
0.2
50
150
-65~150
V
A
A
A
W
V
CEO
Collector-Emitter
Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
P
C
T
J
T
stg
isc Website:www.iscsemi.cn

BDW23C Related Products

BDW23C BDW23 BDW23A BDW23B
Description 6 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220 6 A, 45 V, NPN, Si, POWER TRANSISTOR, TO-220AB 6 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220 6 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220
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