INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
DESCRIPTION
·Collector–Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 45V- BDW55
= 60V- BDW57
= 80V- BDW59
·Complement
to Type BDW56/58/60
APPLICATIONS
·Designed
for use in professional equipment such as
telecommunication and etc.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
BDW55
V
CBO
Collector-Base
Voltage
BDW57
BDW59
BDW55
V
CER
Collector-Emitter
Voltage R
BE
= 1kΩ
BDW57
BDW59
BDW55
V
CEO
Collector-Emitter
Voltage
BDW57
BDW59
V
EBO
I
C
I
CM
P
C
T
J
T
stg
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
45
60
100
45
60
100
45
60
80
5
1
1.5
8
175
-65~175
V
A
A
W
℃
℃
V
V
V
UNIT
BDW55/57/59
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX
10
100
UNIT
℃/W
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
BDW55
V
CEO(SUS)
Collector-Emitter
Sustaining Voltage
BDW57
BDW59
V
CE
(sat)
V
BE(
on
)
I
CBO
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
BDW55
I
CBO
Collector Cutoff Current
BDW57
BDW59
I
EBO
h
FE-1
h
FE-2
h
FE-3
f
T
Emitter Cutoff Current
DC Current Gain
DC Current Gain
DC Current Gain
Current-Gain—Bandwidth Product
I
C
= 0.5A; I
B
= 50mA
I
C
= 0.5A ; V
CE
= 2V
V
CB
= V
CBOmax
;I
E
= 0
V
CB
= 30V; I
E
=0;T
J
= 150℃
V
CB
= 45V; I
E
=0;T
J
= 150℃
V
CB
= 70V; I
E
=0;T
J
= 150℃
V
EB
= 5V; I
C
=0
I
C
= 5mA ; V
CE
= 2V
I
C
= 150mA ; V
CE
= 2V
I
C
= 500mA ; V
CE
= 2V
I
C
= 50mA ; V
CE
= 5V;f
test
= 35MHz
I
C
= 10mA ;I
B
=0
B
BDW55/57/59
CONDITIONS
MIN
45
60
80
TYP.
MAX
UNIT
V
0.5
1.0
0.1
10
10
10
10
25
40
25
250
250
V
V
μA
μA
μA
MHz
Switching times
t
d
t
r
t
stg
t
f
Delay Time
Rise Time
Storage Time
Fall Time
30
30
500
80
ns
ns
ns
ns
I
C
= 0.15A; I
B1
= -I
B2
= 15mA;
V
CC
= 10.2V
isc Website：www.iscsemi.cn
2
京公网安备 11010802033920号
EEWORLD
