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BUV47B

Description
Silicon NPN Power Transistors
File Size118KB,3 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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BUV47B Overview

Silicon NPN Power Transistors

Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BUV47 BUV47B
DESCRIPTION
・With
TO-3PN package.
・High
voltage.
・Very
high switching speed.
APPLICATIONS
・Suited
for 220V switchmode power supply,
DC and AC motor control.
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
固电
PARAMETER
导½
CONDITIONS
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
INC
GN
HA
ON
MIC
E SE
Open emitter
Open base
Open collector
OR
DUT
VALUE
850
400
7
9
15
3
UNIT
V
V
V
A
A
A
W
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
90
-65~150
-65~150
THERMAL CHARACTERISTICS
SYMBOL
R
th j-case
PARAMETER
Thermal resistance junction case
MAX
1.38
UNIT
℃/W

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