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BUW48

Description
POWER TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size118KB,3 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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BUW48 Overview

POWER TRANSISTOR

BUW48 Parametric

Parameter NameAttribute value
stateACTIVE
Transistor typeGENERAL PURPOSE POWER
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BUW49
DESCRIPTION
・With
TO-3PN package.
・High
current capability.
・Fast
switching speed.
・Low
collector saturation voltage
APPLICATIONS
・Switching
regulators.
・Motor
control.
・High
frequency and efficency converters
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
C
T
j
T
stg
固电
导½
PARAMETER
Fig.1 simplified outline (TO-3PN) and symbol
INC
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current (Pulse)
Base current
Base current (peak)
ANG
H
MIC
E SE
Open emitter
Open base
Open collector
CONDITIONS
OR
CT
NDU
O
VALUE
160
80
7
30
40
6
10
UNIT
V
V
V
A
A
A
A
W
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
150
175
-65~175

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