Si6943BDQ
New Product
Vishay Siliconix
Dual P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
-12
r
DS(on)
(W)
0.08 @ V
GS
= -4.5 V
0.105 @ V
GS
= -2.5 V
I
D
(A)
-2.5
- 1.9
S
1
S
2
TSSOP-8
D
1
S
1
S
1
G
1
1
2
3
4
Top View
D
1
P-Channel MOSFET
D
2
P-Channel MOSFET
D
8 D
2
7 S
2
6 S
2
5 G
2
G
1
G
2
Si6943BDQ
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
_
Pulsed Drain Current (10
ms
Pulse Width)
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
10 secs
-12
"8
- 2.5
Steady State
Unit
V
-2.3
-1.8
-20
A
-0.7
0.80
0.50
-55 to 150
W
_C
I
D
I
DM
I
S
P
D
T
J
, T
stg
-2.2
-1.0
1.10
0.70
THERMAL RESISTANCE RATINGS
Parameter
t
v
10 sec
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72016
S-21780—Rev. A, 07-Oct-02
www.vishay.com
Steady State
Steady State
R
thJA
R
thJF
Symbol
Typical
89
120
70
Maximum
110
150
90
Unit
_C/W
C/W
1
Si6943BDQ
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= -250
mA
V
DS
= 0 V, V
GS
=
"8
V
V
DS
= -9.6 V, V
GS
= 0 V
V
DS
= -9.6 V, V
GS
= 0 V, T
J
= 70_C
V
DS
-5 V, V
GS
= -4.5 V
V
GS
= -4.5 V, I
D
= -2.5 A
V
GS
= -2.5 V, I
D
= -1.9 A
V
DS
= -15 V, I
D
= -2.5 A
I
S
= -1.0 A, V
GS
= 0 V
-10
0.06
0.08
8
-0.75
-1.2
0.08
0.105
W
S
V
-0.45
-0.8
"100
-1
-5
V
nA
mA
m
A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= -1.0 A, di/dt = 100 A/ms
V
DD
= -6 V, R
L
= 6
W
I
D
^
-1.0 A, V
GEN
= -4.5 V, R
G
= 6
W
V
DS
= -6 V, V
GS
= -4.5 V, I
D
= -2.5 A
5.7
0.8
1.6
15
35
35
30
30
25
60
60
50
60
ns
10
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
V
GS
= 5 thru 3.5 V
16
I
D
- Drain Current (A)
I
D
- Drain Current (A)
2.5 V
12
3V
16
20
Transfer Characteristics
T
C
= -55_C
25_C
125_C
12
8
2V
8
4
1.5 V
0
0
1
2
3
4
5
4
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
DS
- Drain-to-Source Voltage (V)
www.vishay.com
V
GS
- Gate-to-Source Voltage (V)
Document Number: 72016
S-21780—Rev. A, 07-Oct-02
2
Si6943BDQ
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.15
r
DS(on)
- On-Resistance (
W
)
1000
Vishay Siliconix
Capacitance
0.09
V
GS
= 2.5 V
V
GS
= 4.5 V
C - Capacitance (pF)
0.12
800
600
C
iss
0.06
400
C
oss
0.03
200
C
rss
0.00
0
3
6
9
12
15
0
0
2
4
6
8
10
12
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
5
V
GS
- Gate-to-Source Voltage (V)
V
DS
= 6 V
I
D
= 2.5 A
4
1.6
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 2.5 A
1.4
3
r
DS(on)
- On-Resistance (
W)
(Normalized)
2.6
3.9
5.2
6.5
1.2
2
1.0
1
0.8
0
0.0
1.3
0.6
-50
-25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (_C)
Source-Drain Diode Forward Voltage
20
0.20
On-Resistance vs. Gate-to-Source Voltage
I
S
- Source Current (A)
10
T
J
= 150_C
r
DS(on)
- On-Resistance (
W
)
0.16
0.12
I
D
= 2.5 A
0.08
T
J
= 25_C
0.04
1
0.0
0.00
0.3
0.6
0.9
1.2
1.5
0
1
2
3
4
5
6
7
8
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 72016
S-21780—Rev. A, 07-Oct-02
www.vishay.com
3
Si6943BDQ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
60
Single Pulse Power, Junction-to-Ambient
48
0.2
V
GS(th)
Variance (V)
Power (W)
I
D
= 250
mA
0.0
36
24
-0.2
12
-0.4
-50
-25
0
25
50
75
100
125
150
0
10
- 3
10
- 2
10
- 1
Time (sec)
1
10
T
J
- Temperature (_C)
Safe Operating Area, Junction-to-Case
100
10
I
D
- Drain Current (A)
Limited
by r
DS(on)
1 ms
10 ms
1
100 ms
1s
0.1
T
C
= 25_C
Single Pulse
10 s
dc
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 120_C/W
t
1
t
2
Single Pulse
0.01
10
- 4
10
- 3
10
- 2
10
- 1
1
Square Wave Pulse Duration (sec)
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 72016
S-21780—Rev. A, 07-Oct-02
Si6943BDQ
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
- 4
10
- 3
10
- 2
10
- 1
Square Wave Pulse Duration (sec)
1
10
Document Number: 72016
S-21780—Rev. A, 07-Oct-02
www.vishay.com
5
Embedded System
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