Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1880
DESCRIPTION
·With
ITO-220 package
·Switching
power transistor
·Low
collector saturation voltage
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (ITO-220) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-Peak
Base current
Base current-Peak
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-80
-80
-7
-10
-20
-1.5
-2
25
150
-55~150
UNIT
V
V
V
A
A
A
A
W
℃
℃
I
BM
P
T
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance junction case
MAX
5.0
UNIT
℃/W
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1880
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
Collector cut-off current
I
CEO
I
EBO
h
FE
f
T
Emitter cut-off current
DC current gain
Transition frequency
At rated volatge
I
C
=-5A ; V
CE
=-2V
I
C
=-1A ; V
CE
=-10V
70
50
MHz
-0.1
mA
At rated volatge
-0.1
mA
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
CONDITIONS
I
C
=-0.1A ;I
B
=0
I
C
=-5A; I
B
=-0.5A
I
C
=-5A; I
B
=-0.5A
MIN
-80
-0.3
-1.2
TYP.
MAX
UNIT
V
V
V
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=-5A;I
B1
=-I
B2
=-0.5A ,
R
L
=5Ω;V
BB2
=-4V
0.3
1.5
0.2
μs
μs
μs
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1880
Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
3
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