Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1257
DESCRIPTION
・With
TO-220F package
・Complement
to type 2SD2014
・High
DC current gain
・DARLINGTON
APPLICATIONS
・Driver
for solenoid ,relay and motor
and general purpose
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
固电
导½
半
Fig.1 simplified outline (TO-220F) and symbol
HA
INC
Emitter-base voltage
Collector current
Collector-base voltage
Collector-emitter voltage
ES
NG
Open emitter
MIC
E
CONDITIONS
OR
UCT
ND
O
VALUE
-60
-60
-6
-4
-6
-1
UNIT
V
V
V
A
A
A
W
℃
℃
Open base
Open collector
Collector current-peak
Base current
Collector dissipation
Junction temperature
Storage temperature
T
C
=25℃
25
150
-55~150
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
f
T
C
OB
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Collector output capacitance
CONDITIONS
I
C
=-10mA ;I
B
=0
I
C
=-3A; I
B
=-6mA
I
C
=-3A; I
B
=-6mA
V
CB
=-60V; I
E
=0
V
EB
=-6V; I
C
=0
I
C
=-3A ; V
CE
=-4V
I
E
=0.2A ; V
CE
=-12V
I
E
=0; f=1MHz;V
CB
=-10V
2000
MIN
-60
2SB1257
TYP.
MAX
UNIT
V
-1.5
-2.0
-10
-10
V
V
μA
μA
150
75
MHz
pF
Switching times
t
on
t
s
t
f
固电
Fall time
导½
半
Turn-on time
Storage time
IN
ANG
CH
MIC
E SE
I
C
=-3A; I
B1
=-I
B2
=-10mA
V
CC
=-30V ,R
L
=10Ω
OR
UCT
ND
O
0.4
0.8
0.6
μs
μs
μs
2
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