INCHANGE Semiconductor
isc
RF Product Specification
isc
Silicon NPN RF Transistor
2SC4262
DESCRIPTION
·Low
Noise
·High
Gain
APPLICATIONS
·Designed
for use in UHF~ VHF local oscillator.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
20
V
V
CEO
Collector-Emitter Voltage
15
V
V
EBO
Emitter-Base Voltage
3.0
V
I
C
Collector Current-Continuous
50
mA
P
C
Collector Power Dissipation
@T
C
=25℃
0.1
W
T
J
Junction Temperature
150
℃
T
stg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
RF Product Specification
isc
Silicon NPN RF Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SC4262
TYP.
MAX
UNIT
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 10μA ; I
E
= 0
20
V
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= 1mA ; R
BE
=
∞
15
V
I
CBO
Collector Cutoff Current
V
CB
= 15V; I
E
= 0
0.5
μA
I
EBO
Emitter Cutoff Current
V
EB
= 3V; I
C
= 0
1.0
μA
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 20mA ; I
B
= 4mA
0.5
V
h
FE
DC Current Gain
I
C
= 5mA ; V
CE
= 10V
50
200
f
T
Current-Gain—Bandwidth Product
I
C
= 5mA ; V
CE
= 10V
1.4
2.9
GHz
C
OB
Output Capacitance
I
E
= 0 ; V
CB
= 10V;f= 1.0MHz
1.0
pF
isc Website：www.iscsemi.cn
2
INCHANGE Semiconductor
isc
RF Product Specification
isc
Silicon NPN RF Transistor
2SC4262
isc Website：www.iscsemi.cn
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