Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
3DD200
DESCRIPTION
・With
TO-3 package
・High
collector-base breakdown voltage
:
V
CBO
=250V
APPLICATIONS
・For
TV horizontal output applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
固电
导½
半
PARAMETER
ANG
CH
IN
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base voltage
MIC
E SE
Open emitter
Open base
Open collector
T
C
=75℃
CONDITIONS
OR
CT
NDU
O
VALUE
250
100
6
3
30
150
-55~150
UNIT
V
V
V
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
Rθjc
CHARACTERISTICS
Thermal resistance junction to case
MAX
1.5
UNIT
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
t
f
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
I
C
=50mA ;I
B
=0
I
C
=1mA ;I
E
=0
I
E
=1mA ;I
C
=0
I
C
=3A; I
B
=0.3A
I
C
=3A; I
B
=0.3A
V
CB
=250V; I
E
=0
V
EB
=6V; I
C
=0
I
C
=2A ; V
CE
=5V
30
MIN
100
250
6
TYP.
3DD200
MAX
UNIT
V
V
V
1.5
1.5
0.5
0.1
V
V
mA
mA
固电
Fall time
导½
半
ANG
CH
IN
MIC
E SE
I
C
=3A; I
B1
=0.2A; I
B2
=-0.3A
OR
CT
NDU
O
120
1
μs
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
3DD200
固电
导½
半
ANG
CH
IN
MIC
E SE
OR
CT
NDU
O
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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